StrongIRFET™
IRFB7734PbF
IRFS7734PbF
IRFSL7734PbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
75V
2.8m
3.5m
183A
G
S
max
I
D
D
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
S
D
G
TO-220AB
IRFB7734PbF
S
G
D2Pak
IRFS7734PbF
G
S
D
TO-262
IRFSL7734PbF
G
Gate
D
Drain
S
Source
Base part number
IRFB7734PbF
IRFSL7734PbF
IRFS7734PbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7734PbF
IRFSL7734PbF
IRFS7734PbF
IRFS7734TRLPbF
RDS(on), Drain-to -Source On Resistance (m
)
10
ID = 100A
200
160
8
ID, Drain Current (A)
120
6
T J = 125°C
80
4
T J = 25°C
2
4
6
8
10
12
14
16
18
20
40
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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Fig 2.
Maximum Drain Current vs. Case Temperature
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November 5, 2014
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
IRFB/S/SL7734PbF
Max.
183
130
650
290
2.0
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
Max.
350
670
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
–––
Max.
0.51
–––
62
40
Units
mJ
A
mJ
Units
°C/W
Units
A
W
W/°C
V
°C
Avalanche Characteristics
Symbol
Parameter
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Case-to-Sink, Flat Greased Surface (TO-220)
R
CS
Junction-to-Ambient (TO-220)
R
JA
Junction-to-Ambient (PCB Mount) (D
2
Pak)
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
50
––– mV/°C Reference to 25°C, I
D
= 1mA
2.8
3.5
m V
GS
= 10V, I
D
= 100A
3.5
–––
V
GS
= 6.0V, I
D
= 50A
–––
3.7
V
V
DS
= V
GS
, I
D
= 250µA
–––
1.0
V
DS
=75 V, V
GS
= 0V
µA
––– 150
V
DS
=75V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.0
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 70µH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
100A, di/dt
950A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
I
SD
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 37A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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© 2014 International Rectifier
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November 5, 2014
IRFB/S/SL7734PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
180
45
55
125
20
123
124
100
10150
816
500
707
916
Typ.
–––
–––
–––
5.1
47
51
76
96
2.8
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=100A
270
I
D
= 100A
–––
V
DS
= 38V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 38V
–––
I
D
= 100A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
183
A
650
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, VDS = 0V to 60V
V
GS
= 0V, VDS = 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=100A,V
DS
= 64V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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November 5, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFB/S/SL7734PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
100
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.4
ID = 100A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
60µs PULSE WIDTH
2.0
1.6
1.2
0.8
0.1
2.0
3.0
4.0
5.0
6.0
7.0
V GS, Gate-to-Source Voltage (V)
0.4
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID= 100A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 60V
V DS= 38V
V DS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
250
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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November 5, 2014
1000
IRFB/S/SL7734PbF
1msec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100µsec
100
TJ = 175°C
100
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
10
10
TJ = 25°C
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
V GS = 0V
1.0
0.0
0.4
0.8
1.2
1.6
2.0
V SD, Source-to-Drain Voltage (V)
10
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
2.0
95
Id = 1.0mA
90
Energy (µJ)
1.5
85
1.0
80
0.5
75
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.0
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m
)
Fig 12.
Typical C
oss
Stored Energy
3.6
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
3.4
3.2
3.0
2.8
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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November 5, 2014
Embedded System
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