AP6901AGSM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
DC-DC Converter Suitable
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
SO-8
S1/D2
S1/D2
S1/D2
G1
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
CH-1
BV
DSS
R
DS(ON)
I
D
BV
DSS
R
DS(ON)
I
D
D1
30V
16.5mΩ
7.4A
30V
16mΩ
9.3A
S2/A
G2
D1
D1
CH-2
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
Schottky Diode
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
3
S2/A
Rating
Channel-1
30
+20
7.4
5.9
30
1.4
-55 to 150
-55 to 150
Channel-2
30
+20
9.3
7.5
30
2.2
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a (CH-1)
Rthj-a (CH-2)
Parameter
Typ.
Thermal Resistance Junction-ambient
Thermal Resistance Junction-ambient
3
3
Value
Max.
90
55
70
42
Units
℃/W
℃/W
1
201202291
Data and specifications subject to change without notice
AP6901AGSM-HF
CH-1 Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=5A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
12
18
1.65
15
-
-
9.5
3
4
10
6
22
4
120
95
1.3
Max. Units
-
16.5
26
3
-
10
+100
15.2
-
-
-
-
-
-
-
-
2.6
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1140 1820
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=5A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
18
10
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
2
AP6901AGSM-HF
CH-2 Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=6A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
12
18
1.65
16
-
-
9.5
3
4
9
5
22
5
165
105
1.3
Max. Units
-
16
26
3
-
100
+100
15.2
-
-
-
-
-
-
-
-
2.6
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1180 1888
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=1.8A, V
GS
=0V
Is=6A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
17
8
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6901AGSM-HF
Schottky Specifications@T
j
=25
o
C(unless otherwise specified)
Symbol
V
F
I
rm
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Maximum Reverse Leakage Current
I
F
=1.0A
V
r
=24V
V
r
=24V,T
j
=75℃
Test Conditions
Min.
-
-
-
Typ.
0.47
0.004
Max. Units
0.5
0.2
1
V
mA
mA
0.5
4
AP6901AGSM-HF
Channel-1
40
40
T
A
= 25 C
I
D
, Drain Current (A)
30
o
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0 V
T
A
=150
o
C
30
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
20
20
10
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
22
2.0
I
D
=5A
20
T
A
=25 C
Normalized R
DS(ON)
1.6
o
I
D
=7A
V
G
=10V
R
DS(ON)
(m
Ω
)
18
16
1.2
14
0.8
12
10
0.4
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I
D
=250uA
1.6
6
Normalized V
GS(th)
1.2
I
S
(A)
1.2
4
T
j
=150 C
o
T
j
=25 C
o
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
5
Analog electronics
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