AP4957GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Simple Drive Requirement
D1
D2
D1
D2
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G2
S2
-30V
24mΩ
-7.7A
▼
Dual P MOSFET Package
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±20
-7.7
-6.1
-30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200420041
AP4957GM
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
20
30
-
12
-
-
-
27
5
18
14
11
38
25
530
435
3
Max. Units
-
-
24
36
-3
-
-1
-25
±100
45
-
-
-
-
-
-
-
-
4.5
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-7A
V
GS
=-4.5V, I
D
=-5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-7A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=±20V
I
D
=-7A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=15Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1670 2670
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-1.7A, V
GS
=0V
I
S
=-7A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
35
34
Max. Units
-1.2
-
-
V
ns
nC
t
rr
Q
rr
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
℃/W
when mounted on Min. copper pad.
AP4957GM
120
120
100
T
A
= 25 C
-7.0V
-I
D
, Drain Current (A)
o
-10V
100
T
A
= 150 C
o
-10V
-I
D
, Drain Current (A)
80
80
-7.0V
60
60
40
-5.0V
-4.5V
40
-5.0V
-4.5V
V
G
=-3.0V
20
20
V
G
=-3.0V
0
0
1
2
3
4
5
6
7
8
0
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
48
1.6
I
D
=-5A
T
A
=25
℃
40
1.4
I
D
=-7A
V
G
=-10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.2
32
1.0
24
0.8
16
0.6
3
5
7
9
11
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
7
6
1.5
5
-I
S
(A)
4
T
j
=150
o
C
3
T
j
=25
o
C
Normalized -V
GS(th)
(V)
1.0
2
0.5
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP4957GM
12
10000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
10
I
D
= -7A
V
DS
= - 24 V
C
iss
8
6
C (pF)
1000
4
C
oss
C
rss
2
0
0
10
20
30
40
50
60
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
1ms
-I
D
(A)
1
0.05
10ms
100ms
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135 C/W
o
0.1
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V
DS
=-5V
-I
D
, Drain Current (A)
30
V
G
T
j
=25
o
C
T
j
=150
o
C
Q
G
-4.5V
Q
GD
20
Q
GS
10
Charge
0
0
2
4
6
8
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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