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BAS16DW

Description
Fast Switching Surface Mount Si-Planar Diodes
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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BAS16DW Overview

Fast Switching Surface Mount Si-Planar Diodes

BAS16DW Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
package instructionR-PDSO-G6
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSEPARATE, 3 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeR-PDSO-G6
Maximum non-repetitive peak forward current2 A
Number of components3
Phase1
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage75 V
Maximum reverse current1 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage75 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAS16DW
BAS16DW
Fast Switching Surface Mount Si-Planar Diodes
Schnelle Si-Planar-Dioden für die Oberflächenmontage
Version 2014-08-19
Power dissipation – Verlustleistung
2
6
±0.1
200 mW
100 V
SOT-363
0.01 g
2 x 0.65
5
4
0.9
±0.1
1.25
±0.1
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case – Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
2
3
2.4
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
Power dissipation − Verlustleistung
Max. average forward current – Dauergrenzstrom (dc)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
t
p
≤ 1 s
t
p
≤ 1 µs
P
tot
I
FAV
I
FSM
I
FSM
V
RRM
T
j
T
S
2.1
±0.1
Grenzwerte (T
A
= 25°C)
BAS16DW
200 mW
1
)
200 mA
1
)
1A
2A
100 V
-55...+150°C
-55…+150°C
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
Characteristics (T
j
= 25°C)
Forward voltage
2
)
Durchlass-Spannung
2
)
I
F
I
F
I
F
I
F
T
j
= 25°C
T
j
= 150°C
T
j
= 150°C
=
=
=
=
1 mA
10 mA
50 mA
150 mA
V
F
V
F
V
F
V
F
I
R
I
R
I
R
C
T
t
rr
R
thA
Kennwerte (T
j
= 25°C)
< 715 mV
< 855 mV
< 1.0 V
< 1.25 V
< 1 µA
< 30 µA
< 50 µA
2 pF
< 4 ns
< 620 K/W
1
)
Leakage current
Sperrstrom
V
R
= 75 V
V
R
= 25 V
V
R
= 75 V
Max. junction capacitance – Max. Sperrschichtkapazität
V
R
= 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
I
F
= 10 mA über/through I
R
= 10 mA bis/to I
R
= 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
http://www.diotec.com/
© Diotec Semiconductor AG
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