FMMTA13TA datasheet, PDF - EEWORLD Datasheet

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FMMTA13TA: Description300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size37KB，1 Pages; ManufacturerETC2

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FMMTA13TA Overview

300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

FMMTA13TA Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.3000 A
Maximum Collector-Emitter Voltage	30 V
Processing package description	SOT-23, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	darlington
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.3300 W
Transistor type	Universal small signal
Minimum DC amplification factor	10000
Rated crossover frequency	100 MHz

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FMMTA12 Not Recommended for New

Design Please Use FMMTA14

SOT23 NPN SILICON PLANAR

DARLINGTON TRANSISTORS

ISSUE 4 - DECEMBER 1996

COMPLEMENTARY TYPES -

FMMTA12 NONE

FMMTA13 FMMTA63

FMMTA14 FMMTA64

FMMTA12

FMMTA13

FMMTA14

C

B

E

PARTMARKING DETAILS

FMMTA12 3W

FMMTA13 1M

FMMTA14 1N

SYMBOL

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

tot

T

j

:T

stg

20

10

300

330

-55 to +150

FMMTA12

FMMTA13/14

40

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

MIN.

20

40

100

20K

5K

10K

20K

1.0

0.9

1.4

2.0

V

MAX.

UNIT

V

nA

CONDITIONS.

I

C

=100

µ

A, I

B

=0*

I

C

=100

µ

A, I

B

=0*

V

CB

=15V, V

BE

=0

V

CB

=15V, I

E

=0

V

CB

=30V, I

E

=0

V

EB

=10V, I

C

=0

I

C

=10mA, V

CE

=5V*

I

C

=10mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V*

I

C

=10mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V*

I

C

=10mA, I

B

=0.01mA

I

C

=100mA, I

B

=0.1mA

I

C

=10mA, V

CE

=5V*

I

C

=100mA,V

CE

=5V*

Collector-Emitter

FMMTA12

V

(BR)CES

Breakdown Voltage FMMTA13/14

Collector Cut-Off

Current

Collector Cut-Off

Current

FMMTA12

I

CES

FMMTA12

I

CBO

FMMTA13/14

I

EBO

h

FE

Emitter Cut-Off Current

Static Forward

Current Transfer

Ratio

FMMTA12

FMMTA13

FMMTA14

Collector-Emitter

FMMTA12

V

CE(sat)

Saturation Voltage FMMTA13/14

Base-Emitter

On Voltage

FMMTA12

V

BE(on)

FMMTA13/14

*Measured under pulsed conditions. Pulse width =300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for these devices

For typical graphs see FMMT38A datasheet

FMMTA13TA Related Products

	FMMTA13TA	FMMTA12
Description	300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR	300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3
Transistor polarity	NPN	NPN
Maximum collector current	0.3000 A	0.3000 A
Maximum Collector-Emitter Voltage	30 V	30 V
Processing package description	SOT-23, 3 PIN	SOT-23, 3 PIN
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
China RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE Tin	MATTE Tin
Terminal location	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	darlington	darlington
Number of components	1	1
transistor applications	switch	switch
Transistor component materials	silicon	silicon
Maximum ambient power consumption	0.3300 W	0.3300 W
Transistor type	Universal small signal	Universal small signal
Minimum DC amplification factor	10000	10000
Rated crossover frequency	100 MHz	100 MHz

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