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KSMU2N100

Description
1000V N-Channel MOSFET
File Size1MB,8 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet View All

KSMU2N100 Overview

1000V N-Channel MOSFET

KSMD2N100/KSMU2N100
1000V N-Channel MOSFET
TO-252
Features
1.6A, 1000V, R
DS(on)
= 9Ω @V
GS
= 10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-251
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp starter and ballast.
D
!
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
KSMD2N100/KSMU2N100
1000
1.6
1.0
6.4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
160
1.6
5.0
5.5
2.5
50
0.4
-55 to +150
300
T
J
, T
STG
T
L
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
2.5
50
110
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2014-7-19
1
www.kersemi.com
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