IXGC 16N60B2
HiPerFAST
TM
IGBT
IXGC 16N60B2D1
B2-Class High Speed
IGBT in ISOPLUS220
TM
Case
Electrically Isolated Back Surface
Preliminary Data Sheet
D1
V
CES
= 600 V
= 28 A
I
C25
V
CE(sat)
= 2.3 V
t
fi(typ)
= 80 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
D110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
F
C
V
ISOL
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 110°C (IXGC16N60B2D1 diode)
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 22
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
28
13
10
100
I
CM
= 32
@0.8 V
CES
63
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
W
°C
°C
°C
N/lb.
V
°C
g
ISOPLUS 220
TM
(IXGC)
E153432
G
C
E
Isolated back surface*
G = Gate
E = Emitter
C = Collector
Mounting Force
Isolation Voltage; 50/60Hz; t = 1minute; RMS
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
11..65/2.5..15
2500
300
2
Features
DCB Isolated mounting tab
UL recognized (E153432)
Meets TO-273 package Outline
High current handling capability
MOS Gate turn-on
- drive simplicity
Epoxy meets UL94V-0 flammability
classification
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
Weight
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.5
16N60B2
16N60B2D1
5.0
25
50
±100
2.3
T
J
=125°C
1.8
V
μA
μA
nA
V
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
μA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
= ±20 V
I
C
= 12 A
,
V
GE
= 15 V
Note 2
© 2004 IXYS All rights reserved
DS99173A(11/04)
IXGC 16N60B2
IXGC 16N60B2D1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
8
12
780
55
65
19
I
C
= 20A, V
GE
= 15 V, V
CE
= 0.5 V
CES
32
6
10
Inductive load, T
J
= 125°C
I
C
= 12A; V
GE
= 15 V
V
CE
= 400 V; R
G
= R
off
= 22
Ω
Note 1
25
15
70
80
150
25
Inductive load, T
J
= 125°C
I
C
= 12A; V
GE
= 15 V
V
CE
= 400 V; R
G
= R
off
= 22
Ω
Note 1
18
16N60B2
16N60B2D 1
0.38
0.8
110
170
350
0.25
150
150
260
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
mJ
ns
ns
mJ
2.0 K/W
K/W
ISOPLUS220 Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= 12A; V
CE
= 10 V,
Note 2.
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
16N60B2
16N60B2D1
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
t
rr
R
thJC
Notes:
Test Conditions
I
F
= 10 A, V
GE
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
T
J
= 125°C
2.5
110
30
2.66
1.66
V
V
A
ns
ns
2.5 K/W
I
F
= 12 A; -di
F
/dt = 100 A/μs, V
R
= 100 V
V
GE
= 0 V; T
J
= 125°C
I
F
= 1 A; -di
F
/dt = 100 A/μs; V
R
= 30 V, V
GE
= 0 V
1. Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
,
or increased R
G
.
2. Pulse test, t < 300 ms, duty cycle d < 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
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