REVISIONS
LTR
A
B
C
D
DESCRIPTION
Add device types 07, 08, 09, 10, 11, and 12. Delete radiation exposure
circuit. - ro
Add device types 13, 14, 15 and 16 for vendor CAGE 65342. Remove class M
references. - jt
Update paragraphs to MIL-PRF-38535 requirements. - drw
Add device types 17, 18, 19, 20, 21, and 22.
Under Table I, Reset section, Reset pulse width test, for device types 04, 05,
06, 10, 11, 12, 15, 16 only, change the V
DD
condition from 4.75 V to 3.15 V.
Under Table I, Reset section, Reset pulse width test, VDD 4.75 V condition,
delete device types 04, 05, 06, 10, 11, and 12.
Under Table I, Reset section, Reset output voltage test, condition of
I
SOURCE
= 800
A,
delete device type 14 and condition of I
SOURCE
=
500
A,
delete device type 16. - ro
DATE (YR-MO-DA)
12-03-30
14-03-10
20-05-05
20-07-08
APPROVED
C. SAFFLE
C.SAFFLE
James R. Eschmeyer
James R. Eschmeyer
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
D
35
D
15
D
36
D
16
D
17
D
18
REV
SHEET
PREPARED BY
Dan Wonnell
D
19
D
20
D
21
D
1
D
22
D
2
D
23
D
3
D
24
D
4
D
25
D
5
D
26
D
6
D
27
D
7
D
28
D
8
D
29
D
9
D
30
D
10
D
31
D
11
D
32
D
12
D
33
D
13
D
34
D
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
Rajesh Pithadia
APPROVED BY
Charles F. Saffle
DRAWING APPROVAL DATE
11-07-15
REVISION LEVEL
D
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
https://www.dla.mil/LandandMaritime
MICROCIRCUIT, LINEAR, CMOS,
MICROPROCESSOR SUPERVISORY CIRCUIT,
MONOLITHIC SILICON
SIZE
A
CAGE CODE
AMSC N/A
67268
SHEET
1 OF 36
5962-11213
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited.
5962-E333-20
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
11203
01
Q
X
C
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
Generic number
ISL705ARH
ISL705BRH
ISL705CRH
ISL706ARH
ISL706BRH
ISL706CRH
ISL705AEH
ISL705BEH
ISL705CEH
ISL706AEH
ISL706BEH
ISL706CEH
UT01VS50L
UT01VS50D
UT01VS33L
UT01VS33D
Circuit function
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-11213
SHEET
D
2
1.2.2 Device type(s). The device type(s) identify the circuit function as follows – continued:
Device type
17
18
19
20
21
22
Generic number
ISL735AEH
ISL735BEH
ISL735CEH
ISL736AEH
ISL736BEH
ISL736CEH
Circuit function
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 5.0 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
microprocessor supervisory circuit
Radiation hardened, 3.3 V
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Q or V
Device requirements documentation
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1
Terminals
8
Package style
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
1.3 Absolute maximum ratings. 1/
Supply voltage range (V
DD
) .......................................................................................... 0.3 V to 6.5 V
All other inputs ........................................................................................................... -0.3 V to (V
DD
+ 0.3 V)
Power dissipation (P
D
) ..................................................................................................
Lead temperature (soldering, 10 seconds) ....................................................................
Junction temperature (T
J
) .............................................................................................
Storage temperature range ...........................................................................................
Thermal resistance, junction-to-case (
JC
) ...................................................................
2.5 W
+300C
+175C
-65C to +150C
15C/W
Thermal resistance, junction-to-ambient (
JA
) .............................................................. 140C/W
1.4 Recommended operating conditions.
Supply voltage range (V
DD
):
Device types 01, 02, 03, 07, 08, 09, 13, 14, 17, 18, 19 ............................................. 4.75 V to 5.5 V
Device types 04, 05, 06, 10, 11, 12, 15, 16, 20, 21, 22 ............................................. 3.15 V to 3.6 V
Ambient operating temperature range (T
A
) ................................................................... -55C to +125C
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-11213
SHEET
D
3
1.5 Radiation features.
Maximum total dose available (dose rate = 50 - 300 rad(Si)/s):
Device types 01, 02, 03, 04, 05, 06 ...........................................................................
Device types 07, 08, 09, 10, 11, 12 ...........................................................................
Device types 13, 14, 15, 16 .......................................................................................
Maximum total dose available (dose rate
10 mrad(Si)/s):
Device types 07, 08, 09, 10, 11, 12, 17, 18, 19, 20, 21, 22 .......................................
Single event phenomenon (SEP)
No single event latch-up (SEL) occurs to effective LET (see 4.4.4.2)
Device types 01-12, 17-22 .........................................................................................
100 krads (Si) 2/
100 krads (Si) 3/
300 krads (Si) 4/
50 krads(Si) 3/ 5/
86 MeV/(mg/cm
2
) 6/
Device types 13, 14, 15, 16 ........................................................................................
110 MeV/(mg/cm
2
) 6/
The manufacturer supplying RHA device types 01, 02, 03, 04, 05, 06,07, 08, 09, 10, 11, and 12 on this drawing has performed
characterization testing to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance
with MIL-STD-883, method 1019, paragraph 3.13.1.1. The manufacturer perform only high dose rate testing on a wafer by
wafer basis in accordance with MIL-STD-883, method 1019, condition A for device types 01, 02, 03, 04, 05, 06, 13, 14, 15 and
16. The manufacturer perform high dose rate and low dose rate lot acceptance testing on a wafer by wafer basis in accordance
with MIL-STD-883, method 1019, conditions A and D for device types 07, 08, 09, 10, 11, and 12. The manufacturer also
perform low dose rate lot acceptance testing on a wafer by wafer basis in accordance with MIL-STD-883, method 1019,
condition D for device types 17, 18, 19, 20, 21, and 22.
_____
2/
The manufacturer supplying device types 01, 02, 03, 04, 05, and 06 has performed characterization testing in accordance
with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS)
at a level of 100 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions
as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si).
The manufacturer supplying device types 07, 08, 09, 10, 11, and 12 has performed characterization testing in accordance
with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS)
at a level of 100 krads (Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions
as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a
maximum total dose of 50 krads(Si).
The manufacturer supplying device types 13, 14, 15 and 16 guaranteed by design that the device does not contain bipolar
transistor elements. The radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified with MIL-STD-883 method 1019, condition A to a maximum total dose of 300 krads (Si). The manufacturer
perform high dose rate lot acceptance testing on a lot by lot basis in accordance with MIL-STD-883, method 1019,
conditions A for device types 13, 14, 15 and 16.
The manufacturer supplying device types 17, 18, 19, 20, 21, and 22 has performed low dose rate lot acceptance testing on
wafer by wafer basis in accordance with MIL-STD-883, method 1019, conditions D. The radiation end point limits for the
noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition D to a
maximum total dose of 50 krads(Si).
Limits are characterized at initial qualification and after any design or process changes which may affect the SEP
characteristics but, are not production tested. See manufacturer’s SEE test report for more information.
3/
4/
5/
6/
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-11213
SHEET
D
4
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
https://quicksearch.dla.mil.)
2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
-
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of semiconductor Devices.
(Copies of this documents are available online at
https://www.astm.org.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-11213
SHEET
D
5
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