REV
F
DESCRIPTION
CO-28470
DATE
11/8/17
PREP
DF/SM
APPD
HW
Specification, Hybrid TCXO
MOUNT HOLLY SPRINGS, PA 17065
THE RECORD OF APPROVAL FOR THIS
DOCUMENT IS MAINTAINED ELECTRONICALLY
WITHIN THE ERP SYSTEM
CODE IDENT NO
Hi-Rel Standard
SIZE
DWG. NO.
REV
00136
A
DOC200103
F
UNSPECIFIED TOLERANCES: N/A
SHEET 1 0F 26
1.
1.1
SCOPE
General. This specification defines the design, assembly and functional evaluation of high
reliability, hybrid TCXOs produced by Vectron International. Devices delivered to this
specification represent the standardized Parts, Materials and Processes (PMP) Program
developed, implemented and certified for advanced applications and extended environments.
Applications Overview. The designs represented by these products were primarily developed
for the MIL-Aerospace community. The lesser Design Pedigrees and Screening Options
imbedded within DOC200103 bridge the gap between Space and COTS hardware by providing
custom hardware with measures of mechanical, assembly and reliability assurance needed for
Military, Ruggedized COTS or Commercial environments.
1.2
2.
2.1
APPLICABLE DOCUMENTS
Specifications and Standards. The following specifications and standards form a part of this
document to the extent specified herein. The issue currently in effect on the date of quotation
will be the product baseline, unless otherwise specified. In the event of conflict between the
texts of any references cited herein, the text of this document shall take precedence.
Military
MIL-PRF-55310
MIL-PRF-38534
Standards
MIL-STD-202
MIL-STD-883
Oscillators, Crystal Controlled, General Specification For
Hybrid Microcircuits, General Specification For
Test Method Standard, Electronic and Electrical Component Parts
Test Methods and Procedures for Microelectronics
Vectron International
QSP-90100
DOC007131
DOC203982
QSP-91502
3.
3.1
Quality Systems Manual, Vectron International
Identification Common Documents, Materials and Processes, Hi-Rel XO
DPA Specification
Procedure for Electrostatic Discharge Precautions
GENERAL REQUIREMENTS
Classification. All devices delivered to this specification are of hybrid technology conforming
to Type 3, Class 2 of MIL-PRF-55310. Devices carry a Class 1C ESDS classification per
MIL-PRF-38534 and are marked with a single equilateral triangle at pin 1 per MIL-PRF-
55310.
Item Identification. External packaging choices are either metal flatpacks or DDIP with either
Sinewave or CMOS logic output. Unique Model Number Series’ are utilized to identify device
package configurations and output waveform as listed in Table 1.
UNSPECIFIED TOLERANCES
3.2
SIZE
CODE IDENT NO.
DWG NO.
REV.
SHEET
A
00136
N/A
DOC200103
F
2
3.3
Absolute Maximum Ratings.
a. Supply Voltage Range (V
CC
):
b. Storage Temperature Range (T
STG
):
c. Junction Temperature (T
J
):
d. Lead Temperature (soldering, 10 seconds):
-0.5Vdc to +7.0Vdc (+5V CMOS)
-0.5Vdc to +5.0Vdc (+3.3V CMOS)
Contact factory for sinewave output
-65°C to +125°C
+150C
+300°C
3.4
Design, Parts, Materials and Processes, Assembly, Inspection and Test.
3.4.1 Design. The ruggedized designs implemented for these devices are proven in military and
space applications under extreme environments. All designs utilize a 4-point crystal mount.
For radiation characteristics, see paragraph 4.1.3. For all Class S and Class B products,
components meet the Element Evaluation requirements of MIL-PRF-55310, Appendix B. If
Design Pedigree Code “E” is chosen, Enhanced Element Evaluation per Appendix A herein
will be performed.
3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselecting
passive chip component values to offset component tolerances, there will not be fundamental
changes to the design or assembly or parts, materials and processes after first product delivery
of that item without written approval from the procuring activity.
3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-
PRF-55310. These designs have also passed extended dynamic levels of at least:
a. Sine Vibration: MIL-STD-202, Method 204, Condition G (30g pk.)
b. Random Vibration: MIL-STD-202, Method 214, Condition II-J (43.92g rms, three
minute duration in each of three mutually perpendicular directions)
c. Mechanical Shock: MIL-STD-202, Method 213, Condition F (1500g, 0.5ms)
3.4.2 Prohibited Parts, Materials and Processes. The items listed are prohibited for use in high
reliability devices produced to this specification.
a. Gold metallization of package elements without a barrier metal.
b. Zinc chromate as a finish.
c. Cadmium, zinc, or pure tin external or internal to the device.
d. Plastic encapsulated semiconductor devices.
e. Ultrasonically cleaned electronic parts.
f. Heterojunction Bipolar Transistor (HBT) technology.
3.4.3 Assembly. Manufacturing utilizes standardized procedures, processes and verification
methods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.
MIL-PRF-38534 Group B Option 1 in-line inspection is included on levels E and R per
paragraph 7.1 to further verify lot pedigree. Traceability of all components and production lots
are in accordance with MIL-PRF-38534, as a minimum. Tabulated records are provided as a
part of the deliverable data package. Devices are handled in accordance with Vectron
document QSP-91502 (Procedure for Electrostatic Discharge Precautions).
SIZE
CODE IDENT NO.
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DWG NO.
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A
00136
N/A
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F
3
3.4.4 Inspection. The inspection requirements of MIL-PRF-55310 apply to all devices delivered to
this document. Inspection conditions and standards are documented in accordance with the
Quality Assurance, ISO-9001 derived system of QSP-90100.
3.4.5 Test. The Screening test matrix of Table 4 is tailored for selectable-combination testing to
eliminate costs associated with the development/maintenance of device-specific documentation
packages while maintaining performance integrity.
3.4.6 Marking. Device marking shall be in accordance with the requirements of MIL-PRF-55310.
3.4.7 Ruggedized COTS Design Implementation. Design Pedigree “D” devices (see ¶ 5.2) use the
same robust designs as the other device pedigrees. They do not include the provisions of
traceability or the Class-qualified componentry noted in paragraphs 3.4.3 and 4.1.
4.
4.1
DETAIL REQUIREMENTS
Components
4.1.1 Crystals. Cultured quartz crystal resonators are used to provide the selected frequency for the
devices. Premium Q swept quartz is standard for all Class S level products because of its
superior radiation tolerance. For Class B level products, swept quartz is optional, as required
by the customer. In accordance with MIL-PRF-55310, the manufacturer has a documented
crystal evaluation program.
4.1.2 Passive Components. Passive components will have the same pedigree as the die specified in
paragraph 7.1. Where possible, for Design Pedigrees ‘E’ & ‘R’, Established Reliability (ER)
failure level R and S passive components are employed. Otherwise, all components comply
with the Element Evaluation requirements of MIL-PRF-38534 or Enhanced Element
Evaluation as specified in Appendix A herein. When used, inductors may be open construction
and may use up to 47 gauge wire.
4.1.3 Class S Microcircuits. Microcircuits are procured from wafer lots that have passed MIL-PRF-
38534 Class K Lot Acceptance Tests for Class S devices. Although radiation testing is not
performed at the oscillator level, Design Pedigree Codes E and R versions of this TCXO are
acceptable for use in environments of up to 100krad (Si) total dose as a result of wafer lot
specific RLAT or by analysis of the individual components. Sinewave devices are assembled
with all bipolar semiconductors.
ACMOS devices are assembled with all bipolar
semiconductors with the exception of the ACMOS chip used to provide the CMOS output. An
ACMOS die from a radiation tested and certified wafer lot will be provided for all Class S
versions of this TCXO. This microcircuit is certified for 100krads (Si) total ionizing dose
(TID), RHA level R (2X minimum margin). NSC, as the 54ACT designer, rates the SET LET
at > 40MeV and SEL at >120MeV for the FACT™ family (AN-932). Vectron has conducted
additional SEE testing in 2008 to verify this performance since our lot wafer testing does not
include these parameters and determinations.
A copy of the parts list and materials can be provided for customer review upon request.
SIZE
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4.1.3.1 Class B Microcircuits. When specified, microcircuits assembled into Pedigree Codes B and C
devices (¶ 5.2a) are procured from wafer lots that have passed MIL-PRF-55310 element
evaluations for Class B devices.
4.1.4 Packages. Packages are procured that meet the construction, lead materials and finishes as
specified in MIL-PRF-55310. All leads are Kovar with gold plating over a nickel underplate.
Package lots are evaluated in accordance with the requirements of MIL-PRF-38534 as
applicable.
4.1.5 Traceability and Homogeneity. All design pedigrees except option D have active device lots
that are homogenous and traceable to the manufacturer’s individual wafer. Swept Quartz
Crystals are traceable to the quartz bar and the processing details of the autoclave lot, as
applicable. All other elements and materials are traceable to their manufacturing lots.
Manufacturing lot and date code information shall be recorded, by TCXO serial number, of
every component and all materials used in the manufacture of that TCXO. All semiconductors
used in the manufacture of a given production lot of TCXOs shall be from the same wafer and
have the same manufacturing lot date code. A production lot, as defined by Vectron, is all
oscillators that have been kitted and assembled as a single group. After the initial kitting and
assembly, this production lot may be divided into multiple sublots to facilitate alignment and
test capacity and may be sealed at multiple times within a 13 week window.
4.2
Mechanical.
4.2.1 Package Outline. Table 1 links each Hi-Rel Standard Model Number of this specification to a
corresponding package style. Mechanical Outline information of each package style is found
in the referenced Figure.
4.2.2 Thermal Characteristics. Because these TCXOs are multichip hybrid designs, the actual
θ
jc
to
any one given semiconductor die will vary, but the combined average for all active devices
results in a
θ
jc
of approximately 40°C/W. The typical die temperature rise at any one given
semiconductor is 2°C to 4°C. With the oscillator operating at +125°C, the average junction
temperature is approximately +129°C and under no circumstance will it ever exceed the
maximum manufacturer’s rated junction temperature.
4.3
Electrical.
4.3.1 Input Power. CMOS devices are designed for 3.3 ±5% or 5.0 volt ±5% DC operation.
Sinewave devices are designed for 3.3, 5.0, 12.0 or 15.0 volt dc operation with ±5% tolerance.
4.3.2 Temperature Range. Operating range is IAW the chosen temperature stability code.
4.3.3 Frequency Tolerance. Temperature stability includes initial accuracy at +25°C (with EFC),
load ±10% and supply ±5%.
SIZE
CODE IDENT NO.
UNSPECIFIED TOLERANCES
DWG NO.
REV.
SHEET
A
00136
N/A
DOC200103
F
5
Microchip MCU
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