KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor
February 2010
KSC5603D
NPN Silicon Transistor, Planar Silicon Transistor
Features
•
•
•
•
•
High Voltage High Speed Power Switch Application
Wide Safe Operating Area
Built-in Free Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Equivalent Circuit
C
B
1
E
TO-220
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
A
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25°C)
Junction Temperature
Value
1600
800
12
3
6
2
4
100
150
-65 to +150
Units
V
V
V
A
A
A
A
W
°C
°C
T
STG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Thermal Characteristics
Symbol
R
θJC
R
θJA
T
L
T
A
= 25°C unless otherwise noted
Parameter
Thermal Resistance
Junction to Case
Junction to Ambient
Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
Rating
1.25
80
270
Units
°C/W
°C/W
°C
© 2010 Fairchild Semiconductor Corporation
KSC5603D Rev. C2
1
www.fairchildsemi.com
KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CEO
I
EBO
h
FE
T
A
=25°C unless otherwise noted
Parameter
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
=0.5mA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=0.5mA, I
C
=0
V
CES
=1600V, I
E
=0
V
CE
=800V, V
BE
=0
V
EB
=12V, I
C
=0
V
CE
=3V, I
C
=0.4A
V
CE
=10V, I
C
=5mA
T
A
=25°C
T
A
=125°C
T
A
=25°C
T
A
=125°C
T
A
=25°C
T
A
=125°C
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=0.2mA
T
A
=25°C
T
A
=125°C
T
A
=25°C
T
A
=125°C
T
A
=25°C
T
A
=125°C
I
C
=2A, I
B
=0.4A
T
A
=25°C
T
A
=125°C
T
A
=25°C
T
A
=125°C
T
A
=25°C
T
A
=125°C
Min.
1600
800
12
Typ.
1689
870
14.8
0.01
0.01
0.05
Max.
Units
V
V
V
100
1000
100
1000
500
35
μA
μA
μA
μA
μA
20
6
20
20
29
15
43
46
0.5
1.5
1.2
0.74
0.61
0.85
0.74
745
56
5
0.76
0.83
V
CE
(sat)
Collector-Emitter Saturation
Voltage
I
C
=250mA, I
B
=25mA
1.25
2.5
2.5
1.2
1.1
1.2
1.1
1000
500
1.2
1.5
V
V
V
V
V
V
V
V
V
V
pF
pF
MHz
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA
C
ib
C
ob
f
T
V
F
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
V
EB
=10V, I
C
=0, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.1A,V
CE
=10V
I
F
=0.4A
I
F
=1A
T
A
=25°C
T
A
=125°C
T
A
=25°C
T
A
=125°C
© 2010 Fairchild Semiconductor Corporation
KSC5603D Rev. C2
2
www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I47
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