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1N5399

Description
1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size246KB,2 Pages
ManufacturerETC2
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1N5399 Overview

1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

1N5399 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationGENERAL PURPOSE
Phase1
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1.5 A
Maximum non-repetitive peak forward current50 A
1N5391 – 1N5399
Features
!
!
!
!
!
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
Mechanical Data
!
!
!
!
!
!
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.40 grams (approx.)
Mounting Position: Any
Marking: Type Number
Maximum Ratings and Electrical Characteristics
TR
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ON
1N
5391
50
35
1N
5392
100
70
1N
5393
200
140
IC
1N
5395
400
280
1.5
I
O
50
1.0
5.0
50
30
50
-65 to +150
-65 to +150
C
j
T
j
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
V
RRM
V
RWM
V
R
EC
V
R(RMS)
Average Rectified Output Current
(Note 1)
@T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
I
FSM
V
FM
I
RM
EL
@I
F
= 1.5A
Peak Reverse Current
At Rated DC Blocking Voltage
@T
A
= 25°C
@T
A
= 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
R
JA
W
EJ
Storage Temperature Range
T
STG
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
CO
.,lt
d
1.5A SILICON RECTIFIER
B
A
C
D
DO-15
Dim
Min
Max
A
25.4
B
5.50
7.62
C
0.71
0.864
D
2.60
3.60
All Dimensions in mm
1N
5397
600
420
1N
5398
800
560
1N
5399
1000
700
Unit
V
V
A
A
V
µA
pF
K/W
°C
°C
E-mail:wej@yongerjia.com

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1N5399 1N5393 1N5395 1N5391 1N5397 1N5398
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