Advance Technical Information
High-Gain IGBTs
IXGA24N60C4
IXGP24N60C4
IXGH24N60C4
High-Speed PT Trench IGBTs
V
CES
I
C110
V
CE(sat)
t
fi(typ)
=
=
≤
=
600V
24A
2.70V
68ns
TO-263 (IXGA)
G
E
C (Tab)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 10Ω
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
56
24
130
I
CM
= 48
@
≤
V
CES
190
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
g
TO-220 (IXGP)
G
CE
C (Tab)
TO-247 (IXGH)
G
C
E
C (Tab)
G = Gate
E = Emitter
Features
C = Collector
Tab = Collector
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
Optimized for Low Switching Losses
Square RBSOA
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
GE
= 0V
= 250μA, V
CE
= V
GE
T
J
= 125°C
V
CE
= 0V, V
GE
=
±20V
I
C
= I
C110
, V
GE
= 15V, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
600
4.0
6.5
10
500
±100
2.28
1.95
2.70
V
V
μA
μA
nA
V
V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
V
CE
= V
CES
, V
GE
= 0V
© 2012 IXYS CORPORATION, All Rights Reserved
DS100253B(12/12)
IXGA24N60C4 IXGP24N60C4
IXGH24N60C4
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
10
17
875
60
28
64
I
C
=
I
C110
, V
GE
= 15V, V
CE
= 0.5
•
V
CES
7
28
Inductive load, T
J
= 25°C
I
C
=
I
C110
, V
GE
= 15V
Note 2
V
CE
= 360V, R
G
= 10
Ω
21
33
0.40
143
68
0.30
20
32
0.63
130
118
0.50
0.21
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.65 °C/W
°C/W
TO-247 Outline
Notes:
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
1
2
3
TO-220 Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
=
I
C110
, V
CE
= 10V, Note 1
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Terminals: 1 - Gate
3 - Emitter
2 - Collector
0.55
Inductive load, T
J
= 125°C
I
C
=
I
C110
, V
GE
= 15V
Note 2
V
CE
= 360V, R
G
= 10
Ω
TO-247
∅
P
TO-263 Outline
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim.
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
Embedded System
京公网安备 11010802033920号
EEWORLD
