High Speed IGBT
Short Circuit SOA Capability
Preliminary Data Sheet
IXSP 24N60B
V
CES
= 600 V
= 48 A
I
C25
V
CE(sat)
= 2.5 V
t
fi typ
= 170 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 33
Ω
Clamped inductive load, V
CC
= 0.8 V
CES
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125°C
R
G
= 33
Ω,
non repetitive
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
48
24
96
I
CM
= 48
@ 0.8 V
CES
10
150
-55 ... +150
150
-55 ... +150
2
300
V
V
V
V
A
A
A
A
µs
W
°C
°C
°C
g
°C
TO-220 (IXSP)
G
C
(TAB)
C E
G = Gate
E = Emitter
TAB = Collector
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low V
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 50 kHz
Applications
AC and DC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
Easy to mount with 1 screw
High power density
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
3.5
T
J
= 25°C
T
J
= 125°C
6.5
25
1
±100
2.5
V
V
µA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 1.5 mA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
© 2003 IXYS All rights reserved
DS99023(03/03)
IXSP 24N60B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
9
13
1450
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
130
37
41
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
18
18
50
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V,
L = 100 µH
V
CE
= 0.8 V
CES
, R
G
= 33
Ω
50
150
170
1.3
55
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V,
V
CE
= 0.8 V
CES
, R
G
= 33
Ω
75
1.2
190
280
2.4
250
300
2.6
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.83 K/W
0.25
K/W
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-220 Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
FPGA/CPLD
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