Advance Technical Information
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T
IXTA 160N085T
IXTP 160N085T
V
DSS
I
D25
R
DS(on)
= 85 V
= 160 A
Ω
= 6.0 mΩ
TO-3P (IXTQ)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DRMS
I
DM
I
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C; R
GS
= 1 MΩ
Maximum Ratings
85
85
±20
V
V
V
TO-220 (IXTP)
A
A
A
A
G
(TAB)
G
D
S
(TAB)
T
C
= 25°C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 10
Ω
T
C
= 25°C
160
75
350
75
1.0
3
360
-55 ... +175
175
-55 ... +150
J
V/ns
W
°C
°C
°C
°C
°C
G = Gate
S = Source
D S
TO-263 (IXTA)
G
S
(TAB)
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque
TO-3P
TO-220
TO-263
(TO-3P / TO-220)
300
260
M
d
Weight
1.13/10 Nm/lb.in.
5.5
4
3
g
g
g
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 1 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
85
2.0
4.0
±200
25
250
5.0
6.0
V
V
nA
µA
µA
m
Ω
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 50 A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2005 IXYS All rights reserved
DS99347(02/05)
IXTA 160N085T IXTP 160N085T
IXTQ 160N085T
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
64
85
6400
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
927
92
37
V
GS
= 10 V, V
DS
= 60 V, I
D
= 35A
R
G
= 5
Ω
(External)
61
65
36
164
V
GS
= 10 V, V
DS
= 40 V, I
D
= 80 A
48
45
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42 K/W
(TO-3P)
(TO-220)
0.21
0.25
K/W
K/W
TO-3P (IXTQ) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 50A, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
160
350
1.2
A
A
V
TO-220 (IXTP) Outline
I
F
= 50 A, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 25 V, V
GS
= 0 V
100
0.6
ns
µC
TO-263 (IXTA) Outline
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXTA 160N085T
IXTP 160N085T
IXTQ 160N085T
Fig. 1. Output Characteristics
@ 25
°
C
160
140
120
V
GS
= 10V
9V
8V
7V
320
280
6V
240
Fig. 2. Extended Output Characteristics
@ 25
°
C
V
GS
= 10V
9V
8V
6V
7V
I
D
- Amperes
100
5V
80
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I
D
- Amperes
200
160
5V
120
80
40
0
0
0.5
1
1
.5
2
2.5
3
3.5
4
4V
4V
V
D S
- Volts
Fig. 3. Output Characteristics
@ 150
°
C
160
140
120
V
GS
= 10V
9V
8V
7V
2.4
2.2
6V
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Norm alized to I
D
= 50A
Value vs. Junction Tem perature
R
D S ( o n )
- Normalized
2
1.8
I
D
= 100A
1.6
1.4
1.2
1
0.8
0.6
I
D
= 50A
I
D
- Amperes
100
5V
80
60
4V
40
20
3V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
V
D S
- Volts
Fig. 5. R
DS(on)
Norm alized to I
D
= 50A
Value vs. Drain Current
2.6
2.4
T
J
= 175
°
C
90
80
70
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
External Lead Current Limit
R
D S ( o n )
- Normalized
2.2
1.8
1.6
I
D
- Amperes
T
J
= 25
°
C
160
200
240
280
320
2
V
GS
= 10V
15V
-
1.4
1.2
1
0.8
0
40
80
120
----
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2005 IXYS All rights reserved
IXTA 160N085T IXTP 160N085T
IXTQ 160N085T
Fig. 7. Input Adm ittance
240
T
J
= -40
º
C
25
º
C
150
º
C
140
120
100
Fig. 8. Transconductance
200
g
f s
- Siemens
I
D
- Amperes
160
T
J
= -40
º
C
80
60
40
20
0
25
º
C
150
º
C
120
80
40
0
2.5
3
3.5
4
4.5
5
5.5
6
0
40
80
120
160
200
240
280
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
300
10
9
250
8
7
V
DS
= 42.5V
I
D
= 80A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
200
V
G S
- Volts
T
J
= 150
º
C
T
J
= 25
º
C
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
150
100
50
0
V
S D
- Volts
Q
G
- nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
1000
T
J
= 175
º
C
C iss
T
C
= 25
º
C
Fig. 11. Capacitance
10000
Capacitance - picoFarads
R
DS(on)
Limit
1000
C oss
I
D
- Amperes
25µs
100
100µs
1ms
10ms
DC
10
100
C rss
f = 1MHz
10
0
5
10
15
20
25
30
35
40
1
10
100
1000
V
DS
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V
D S
- Volts
IXTA 160N085T IXTP 160N085T
IXTQ 160N085T
Fig. 13. Maximum Transient Thermal Resistance
1.00
R
( t h ) J C
- ºC / W
0.10
0.01
0.1
1
10
100
1000
P
ulse Width - m
illiseconds
© 2005 IXYS All rights reserved
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