U440
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U440
The U440 is a tightly matched Monolithic Dual N-Channel JFET
The U440 are monolithic dual JFETs mounted in a
single TO-71 package. The monolithic dual chip design
reduces parasitics and gives better performance at very
high frequencies while ensuring extremely tight
matching. These devices are an excellent choice for
use as wideband differential amplifiers in demanding
test and measurement applications. The U440 is a
direct replacement for discontinued Siliconix U440.
The hermetically sealed TO-71 is well suited for military
applications.
(See Packaging Information).
U440 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors
.
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|V
GS1
– V
GS2
|
Differential Gate to Source Cutoff Voltage
∆|V
GS1
– V
GS2
| / ∆T
Differential Gate to Source Cutoff
Voltage Change with Temperature
I
DSS1
/ I
DSS2
Gate to Source Saturation Current Ratio
G
fs1
/ G
fs2
Forward Transconductance Ratio
2
FEATURES
Direct Replacement for SILICONIX U440
HIGH CMRR
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS
1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
Gate to Gate
MIN
TYP
20
MAX
10
UNITS
mV
µV/°C
%
CMRR ≥ 85dB
I
GSS
≤ 1 pA
‐65°C to +150°C
‐55°C to +135°C
500mW
50mA
‐25V
‐25V
±50V
CONDITIONS
V
DG
= 10V, I
D
= 5mA
V
DG
= 10V, I
D
= 5mA
T
A
= ‐55°C to +125°C
V
DS
= 10V, V
GS
= 0V
CMRR
Click To Buy
0.07
0.97
85
%
Common Mode Rejection Ratio
dB
TYP.
‐3.5
15
‐1
‐1
6
70
3
1
4
MAX.
‐6
30
‐500
‐500
9
200
UNITS
V
V
mA
pA
pA
mS
µS
pF
pF
nV/√Hz
CONDITIONS
I
G
= ‐1µA, V
DS
= 0V
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0V
V
GS
= ‐15V, V
DS
= 0V
V
DG
= 10V, I
D
= 5mA
Forward Transconductance
Output Conductance
Input Capacitance
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
4.5
TO-71 (Top View)
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DG
= 5 to 10V, I
D
= 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV
GSS
Gate to Source Breakdown Voltage
‐25
V
GS(off)
Gate to Source Cutoff Voltage
‐1
I
DSS
Gate to Source Saturation Current
6
3
I
GSS
Gate Leakage Current
I
G
Gate Operating Current
g
fs
g
os
C
ISS
C
RSS
e
n
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, I
D
= 5mA, f = 1MHz
V
DS
= 10V, I
D
= 5mA, f = 10kHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
Available Packages:
U440 in TO-71
U440 available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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