VISHAY
BY203/..S
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
\
Features
• Glass passivated junction
• Hermetically sealed package
Applications
Fast rectification and switching avalanche sinterglass
diode for TV-line output circuits and switch mode
power supply
Mechanical Data
Case:
Sintered glass case, SOD 57
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
949539
Weight:
370 mg, (max. 500 mg)
Parts Table
Part
BY203-12S
BY203-16S
BY203-20S
Type differentiation
V
R
= 1200 V; I
FAV
= 250 mA
V
R
= 1600 V; I
FAV
= 250 mA
V
R
= 2000 V; I
FAV
= 250 mA
SOD57
SOD57
SOD57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
Average forward current
Peak forward surge current
Junction temperature range
Storage temperature range
Non repetitive reverse avalanche energy
I
(BR)R
= 0.4 A
t
p
= 10 ms half sinewave
Test condition
Sub type
BY203-
12S
BY203-
16S
BY203-
20S
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
FAV
I
FSM
T
j
T
stg
E
R
Value
1200
1600
2000
250
20
-55 to
+150
-55 to
+175
10
Unit
V
V
V
mA
A
°C
°C
mJ
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
maximum lead length
Sub type
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86002
Rev. 5, 07-Jan-03
www.vishay.com
1
BY203/..S
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Test condition
I
F
= 200 mA, t
p
/T = 0.01, t
p
= 0.3
ms
V
R
= 700 V
V
R
= 1000 V
V
R
= 1200 V
Breakdown voltage
BY203-12S
BY203-16S
BY203-20S
Sub type
Symbol
V
F
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
t
rr
1200
1600
2000
Min
Typ.
VISHAY
Max
2.4
2
2
2
Unit
V
µA
µA
µA
V
V
V
I
R
= 100
µA,
t
p
/T = 0.01, t
p
= 0.3 ms BY203-12S
I
R
= 100
µA,
t
p
/T = 0.01, t
p
= 0.3 ms BY203-16S
I
R
= 100
µA,
t
p
/T = 0.01, t
p
= 0.3 ms BY203-20S
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
300
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
240
T
j
– Junction Temperature (
°
C )
0.30
200
160
120
80
BY203/12
40
BY203/16
0
BY203/20
I
FAV
– Average Forward Current ( A )
0.25
0.20
0.15
0.10
0.05
0.00
V
R
=V
RRM
half sinewave
0
R
thJA
=45K/W
l=10mm
V
RRM
V
R
R
thJA
=100K/W
PCB: d=25mm
94 9080
1600
0
400
800
1200
V
R
,V
RRM
– Reverse / Repetitive Peak Reverse
Voltage ( V )
16398
30
60
90
120
T
amb
– Ambient Temperature (
°C
)
150
Figure 1. Junction Temperature vs. Reverse/Repetitive Peak
Reverse Voltage
Figure 3. Max. Average Forward Current vs. Ambient Temperature
10.000
1000
V
R
= V
RRM
I
F
– Forward Current ( A)
1.000
T
j
=175°C
T
j
=25°C
I
R
– Reverse Current (
m
A )
100
0.100
10
0.010
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16397
1
25
16399
50
75
100
125
150
V
F
– Forward Voltage ( V )
T
j
– Junction Temperature (
°C
)
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 86002
Rev. 5, 07-Jan-03
BY203/..S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 86002
Rev. 5, 07-Jan-03
Domestic Chip Exchange
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