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BZX55A3V3-TAP

Description
Zener Diode, 3.3V V(Z), 1%, 0.5W,
CategoryDiscrete semiconductor    diode   
File Size54KB,6 Pages
ManufacturerTelefunken Semiconductor GmbH & Co Kg
Download Datasheet Parametric View All

BZX55A3V3-TAP Overview

Zener Diode, 3.3V V(Z), 1%, 0.5W,

BZX55A3V3-TAP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid103013449
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance85 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage3.3 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance1%
Working test current5 mA
BZX55B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Low noise
Very high stability
Available with tighter tolerances
V
Z
–tolerance
±
2%
Applications
Voltage stabilization
94 9367
Order Instruction
Type
BZX55B2V4
Ordering Code
BZX55B2V4–TAP
Remarks
Ammopack
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4 mm, T
L
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4 mm, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=100mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85604
Rev. A4, 12-Mar-01
www.vishay.com
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