IRFH9310PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
-30
4.6
110
2.8
-21
V
6 mm
mΩ
5 mm
D
D
D
D
S
S
S
G
Q
g (typical)
R
G (typical)
I
D
(@T
A
= 25°C)
nC
Ω
A
PQFN
5mm x 6mm
Applications
•
Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Resulting Benefits
Low R
DSon
(≤ 4.6mΩ)
Industry-Standard PQFN Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Lower Conduction Losses
results in
Multi-Vendor Compatibility
⇒
Environmentally Friendlier
Orderable part number
IRFH9310TRPBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
A
= 70°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V (Silicon Limited)
Continuous Drain Current, V
GS
@ -10V (Silicon Limited)
Continuous Drain Current, V
GS
@ -10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 20
-21
-17
-107
- 86
-40
-170
3.1
2.0
0.025
-55 to + 150
Units
V
A
f
f
c
W
W/°C
°C
Notes
through
are on page 2
1
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2014 International Rectifier
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August 26, 2014
IRFH9310PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Min.
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.020
3.7
5.7
-1.9
-5.8
–––
–––
–––
–––
–––
58
110
17
28
2.8
25
47
65
70
5250
1300
880
Max.
–––
–––
4.6
7.1
-2.4
–––
-1.0
-150
-100
100
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Units
V
V/°C
mΩ
V
mV/°C
µA
nA
S
nC
nC
Ω
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -21A
V
GS
= -4.5V, I
D
e
= -17A
e
V
DS
= V
GS
, I
D
= -100µA
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
V
DS
= -10V, I
D
= -17A
V
DS
= -15V,V
GS
= -4.5V,I
D
= - 17A
V
GS
= -10V
V
DS
= -15V
I
D
= -17A
V
DD
= -15V, V
GS
= -4.5V
h
Total Gate Charge
h
Turn-On Delay Time
h
Gate-to-Drain Charge
h
Gate Resistance
h
Gate-to-Source Charge
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
ns
I
D
= -1.0A
R
G
= 1.8Ω
See Figs. 19a & 19b
V
GS
= 0V
e
pF
V
DS
= -15V
ƒ = 1.0MHz
Max.
170
-17
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
d
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
42
42
Max.
-3.1
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Ã
-170
-1.2
63
63
Typ.
–––
–––
–––
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
J
= 25°C, I
S
= -3.1A, V
GS
= 0V
di/dt = 100/µs
Max.
1.6
40
35
°C/W
e
T
J
= 25°C, I
F
= -3.1A, V
DD
= -24V
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
e
Parameter
Junction-to-Ambient
g
Units
f
Junction-to-Ambient (t<10s)
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.1mH, R
G
= 50Ω, I
AS
= -17A.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board.
R
θ
is measured at T
J
of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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August 26, 2014
IRFH9310PbF
1000
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
1000
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
-ID, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
-2.7V
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1
2.7V
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = -21A
1.4
VGS = -10V
-I D, Drain-to-Source Current (A)
100
1.2
10
TJ = 150°C
1
VDS = -15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
T J = 25°C
1.0
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
12.0
ID= -17A
-V GS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
VDS= -24V
VDS= -15V
VDS = -6.0V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
-VDS, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
August 26, 2014
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IRFH9310PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
100
T J = 150°C
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
10
DC
1
10msec
10
T J = 25°C
VGS = 0V
1.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-VSD, Source-to-Drain Voltage (V)
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
25
-V GS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.2
2.0
1.8
1.6
1.4
1.2
1.0
ID = -100µA
20
-I D, Drain Current (A)
15
10
5
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
100
Thermal Response ( Z thJA ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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August 26, 2014
IRFH9310PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
RDS(on), Drain-to -Source On Resistance ( mΩ)
12
ID = -21A
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
10
8
Vgs = -4.5V
6
4
Vgs = -10V
2
0
0
20
40
60
80
100
120
-I D, Drain Current (A)
Fig 12.
On-Resistance vs. Gate Voltage
800
EAS , Single Pulse Avalanche Energy (mJ)
-V GS, Gate -to -Source Voltage (V)
Fig 13.
Typical On-Resistance vs. Drain Current
50000
600
ID
TOP
-2.0A
-3.1A
BOTTOM -17A
Power (W)
40000
30000
400
20000
200
10000
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
0
1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1
Time (sec)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
Fig 15.
Typical Power vs. Time
D.U.T
*
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
V
GS
=10V
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
-
-
+
R
G
•
•
•
•
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
V
DD
V
DD
+
-
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor
Curent
Inductor
Current
Ripple
≤
5%
I
SD
*
Reverse Polarity of D.U.T for P-Channel
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Diode Reverse Recovery Test Circuit
for P-Channel HEXFET
®
Power MOSFETs
5
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August 26, 2014
Real-time operating system RTOS
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