Polar
TM
Power MOSFET
IXTY3N60P
IXTA3N60P
IXTP3N60P
V
DSS
I
D25
R
DS(on)
= 600V
= 3A
2.9
N-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
600
600
30
40
3
3
6
LE
A
A
A
100
5
mJ
V/ns
70
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
-55 ... +150
150
-55 ... +150
300
260
10..65 / 2.2..14.6
1.13 / 10
0.35
2.50
3.00
Characteristic Values
Min.
Typ.
Max.
600
3.0
5.5
V
V
100
nA
5
A
50
A
2.9
T
C
= 25C, Pulse Width Limited by T
JM
O
T
J
= 125C
BS
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 50μA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
O
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2017 IXYS CORPORATION, All Rights Reserved
TE
TO-263 (IXTA)
V
V
G
S
S
D (Tab)
V
V
D (Tab)
TO-220 (IXTP)
GD
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Low Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
DS99449F(6/17)
IXTY3N60P
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
Q
g(on)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCS
TO-220
0.50
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 30 (External)
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max
2.2
3.4
411
44
6.4
9.8
3.4
3.5
25
25
58
22
S
pF
pF
pF
nC
nC
nC
ns
IXTA3N60P
IXTP3N60P
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
O
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Note 1. Pulse test, t
300s, duty cycle, d 2%.
O
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
BS
I
F
= 3A, -di/dt = 100A/μs, V
R
= 100V
LE
Characteristic Values
Min.
Typ.
Max
3
A
9
1.5
A
V
ns
500
TE
ns
ns
ns
1.8
C/W
C/W
IXTY3N60P
IXTA3N60P
IXTP3N60P
o
Fig. 1. Output Characteristics @ T
J
= 25 C
3.0
V
GS
= 10V
8V
7V
5
6
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= 10V
8V
2.5
2.0
4
7V
I
D
- Amperes
1.5
I
D
- Amperes
6V
3
1.0
2
0.5
0.0
0
1
2
3
4
5
6
7
8
9
10
TE
1
6V
0
0
5
10
15
20
25
30
V
DS
- Volts
o
V
DS
- Volts
3.0
V
GS
= 10V
7V
2.5
LE
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
20
-50
-25
0
V
GS
= 10V
Fig. 3. Output Characteristics @ T
J
= 125 C
Fig. 4. R
DS(on)
Normalized to I
D
= 1.5A Value vs.
Junction Temperature
2.0
6V
R
DS(on)
- Normalized
I
D
= 3A
I
D
- Amperes
1.5
I
D
= 1.5A
1.0
0.5
0.0
0
BS
O
5V
2
4
6
8
10
12
14
16
18
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
3.0
Fig. 5. R
DS(on)
Normalized to I
D
= 1.5A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
3.5
3.0
2.5
V
GS
= 10V
R
DS(on)
- Normalized
O
2.0
1.5
1.0
0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2.5
T
J
= 125 C
o
I
D
- Amperes
2.0
1.5
1.0
0.5
0.0
T
J
= 25 C
o
3.5
4.0
4.5
5.0
5.5
6.0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY3N60P
IXTA3N60P
IXTP3N60P
Fig. 7. Input Admittance
5.0
4.5
4.0
3.5
5
V
DS
= 10V
7
6
V
DS
= 10V
Fig. 8. Transconductance
T
J
= - 40 C
o
g
f s
- Siemens
I
D
- Amperes
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
o
o
25 C
4
125 C
3
2
1
0
o
o
T
J
= 125 C
25 C
- 40 C
o
TE
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
- Volts
I
D
- Amperes
9
8
7
6
I
S
- Amperes
5
4
3
2
1
0
0.4
T
J
= 125 C
o
V
GS
- Volts
O
T
J
= 25 C
o
BS
0.5
0.6
0.7
0.8
0.9
LE
10
9
8
7
6
5
4
3
2
1
0
1.0
0
1
2
3
4
5
6
7
8
9
10
V
DS
= 300V
I
D
= 1.5A
I
G
= 10mA
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
1,000
10
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
O
Ciss
R
DS
(on) Limit
25μs
100
I
D
- Amperes
100μs
1
1ms
DC
10ms
Coss
10
T
J
= 150 C
T
C
= 25 C
Single Pulse
0.1
0
5
10
15
20
25
30
35
40
10
100
o
o
f
= 1 MHz
1
Crss
1,000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY3N60P
IXTA3N60P
IXTP3N60P
Fig. 13. Maximum Transient Thermal Impedance
10
Fig. 13. Maximum Transient Thermal Impedance
3
Z
(th )JC
- K / W
1
0.1
0.0001
0.001
LE
0.01
TE
0.1
1
Pulse Width - Second
O
© 2017 IXYS CORPORATION, All Rights Reserved
BS
IXYS REF: T_3N60P(2J) 6-20-17-A
O
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