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BR25H080F-2LB

Description
Serial EEPROM Series Industrial EEPROM 125C Operation SPI BUS EEPROM
Categorystorage    storage   
File Size981KB,32 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

BR25H080F-2LB Overview

Serial EEPROM Series Industrial EEPROM 125C Operation SPI BUS EEPROM

BR25H080F-2LB Parametric

Parameter NameAttribute value
package instructionSOP,
Reach Compliance Codecompli
Other features100 YEAR DATA RETENTION
Maximum clock frequency (fCLK)5 MHz
Data retention time - minimum100
JESD-30 codeR-PDSO-G8
length5 mm
memory density8192 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count1024 words
character code1000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize1KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Maximum seat height1.71 mm
Serial bus typeSPI
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width4.4 mm
Maximum write cycle time (tWC)4 ms
Base Number Matches1
Datasheet
Serial EEPROM Series Industrial EEPROM
125℃ Operation SPI BUS EEPROM
BR25H080F-2LB
General Description
This is the product guarantees long time support in Industrial market.
BR25H080F-2LB is a serial EEPROM of SPI BUS interface method.
Features
Long Time Support a Product for Industrial
Applications.
High speed clock action up to 10MHz (Max.)
Wait function by HOLDB terminal.
Part or whole of memory arrays settable as read only
memory area by program.
2.5V to 5.5V single power source action most
suitable for battery use.
Page write mode useful for initial value write at
factory shipment.
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
Self-timed programming cycle.
Low Supply Current
At write operation (5V)
: 1.0mA (Typ.)
At read operation (5V)
: 1.0mA (Typ.)
At standby operation (5V)
: 0.1μA (Typ.)
Address auto increment function at read operation
Prevention of time mistake
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers
(BP1, BP0).
Prevention of write mistake at low voltage.
Data at shipment Memory array: FFh, status register
WPEN, BP1, BP0 : 0
More than 100 years data retention.
More than 1 million write cycles.
Package
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
Application
Industrial Equipment
Page write
Number of pages
Product Number
32 Byte
BR25H080F-2LB
BR25H080F-2LB
Capacity
8Kbit
Bit Format
1Kx8
Product Number
BR25H080F-2LB
Supply Voltage
2.5V to 5.5V
Package
SOP8
○Product
structure:Silicon monolithic integrated circuit
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This
product has no designed protection against radioactive rays
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