STN80T08
N Channel Enhancement Mode MOSFET
80.0A
DESCRIPTION
STN80T08 is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION
TO220-3L
FEATURE
80V/40.0A, R
DS(ON)
= 8m (Typ.)
@V
GS
= 10V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-220 package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN80T08 2011. V1
STN80T08
N Channel Enhancement Mode MOSFET
80.0A
ABSOULTE MAXIMUM RATINGS
(Ta = 25
℃
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150
℃
)
Pulsed Drain Current
Avalanche Current
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
TA=25
℃
TA=25℃
TA=70
℃
Symbol
VDSS
VGSS
ID
Typical
80
±25
80.0
300.0
370
80
200
175
-55/175
0.75
Unit
V
V
A
A
A
W
℃
℃
℃
/W
IDM
IAS
PD
TJ
TSTG
RθJA
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN80T08 2011. V1
STN80T08
N Channel Enhancement Mode MOSFET
80.0A
ELECTRICAL CHARACTERISTICS
( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
Zero Gate Voltage
Drain Current
Drain-source On-
Resistance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
V
DD
=30V,R
L
= 30
V
DS
=10V,R
G
=6
V
DS
=30V,VGS=0V
F=1MHz
V
DS
=4.5V,V
DS
=70V
I
D
≡75A
80
18
27
3350
450
200
25
13
75
65
42
23
140
125
nS
pF
112
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V,ID=250uA
V
DS
=V
GS
,ID=250uA
V
DS
=0V,V
GS
=±20V
V
DS
=60V,V
GS
=0V
Tj=5
℃
V
GS
=10V,I
D
=40A
I
S
=1.0A,V
GS
=0V
8
80
2.0
4.0
±
100
V
V
nA
uA
1
30
11
1.1
R
DS(on)
V
SD
m
V
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN80T08 2011. V1
STN80T08
N Channel Enhancement Mode MOSFET
80.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN80T08 2011. V1
STN80T08
N Channel Enhancement Mode MOSFET
80.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN80T08 2011. V1