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BLC9G24LS-170AV

Description
RF POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size89KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BLC9G24LS-170AV Overview

RF POWER, FET

BLC9G24LS-170AV Parametric

Parameter NameAttribute value
Objectid8082871968
Reach Compliance Codeunknown
ECCN codeEAR99
BLC9G24LS-170AV
Power LDMOS transistor
Rev. 1 — 9 February 2015
Objective data sheet
1. Product profile
1.1 General description
170 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in the Doherty demo board.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
2300 to 2400
V
DS
(V)
28
P
L(AV)
(W)
28
G
p
(dB)
15.5
D
(%)
48
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2300 MHz to 2400 MHz frequency range
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