Data Sheet No.PD 60153-J
IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
•
•
•
•
•
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Product Summary
R
ds(on)
V
clamp
I
shutdown
T
on
/T
off
500m
Ω
(max)
50V
2A
1.5µs
Description
The IPS042G is a fully protected dual low side SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165
o
C or when the
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
Package
8-Lead SOIC
Typical Connection
Load
R in series
(if needed)
Q
D
IN
control
S
S
Logic signal
(Refer to lead assignment for correct pin configuration)
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IPS042G
31
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard footprint with 70
µm
copper thickness.
Symbol Parameter
Vds
Vin
Iin, max
Isd
cont.
Maximum drain to source voltage
Maximum input voltage
Maximum IN current
Diode max. continuous current
(1)
(for all Isd mosfets, rth=125
o
C/W)
Isd
pulsed
Diode max. pulsed current
(1)
(1)
P
d
Maximum power dissipation
(for all Pd mosfets, rth=125
o
C/W)
ESD1
ESD2
T stor.
Tj max.
Electrostatic discharge voltage
(Human Body)
Electrostatic discharge voltage
(Machine Model)
Max. storage temperature
Max. junction temperature
Min.
—
-0.3
-10
—
—
—
—
—
-55
-40
Max.
47
7
+10
1.2
3
1
4
0.5
150
+150
Units
V
mA
Test Conditions
A
W
C=100pF, R=1500Ω,
kV
o
C=200pF, R=0Ω, L=10µH
C
Thermal Characteristics
Symbol Parameter
Rth1
Rth2
Rth3
Thermal resistance with standard footprint
(2 mosfets on)
Thermal resistance with standard footprint
(1 mosfet on)
Thermal resistance with 1" square footprint
(2 mosfets on)
Min.
—
—
—
Typ.
100
125
65
Max. Units Test Conditions
—
—
—
o
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Continuous Drain to Source voltage
High level input voltage
Low level input voltage
Continuous drain current (both mosfets at this current)
o
Tamb=85 C
TAmbient = 85
o
C, IN = 5V, rth = 100
o
C/W, Tj = 125
o
C
Rin
Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
Vds (max)
VIH
VIL
I ds
Min.
—
4
0
—
1
—
0
Max.
35
6
0.5
0.53
5
1
1
Units
V
A
k
Ω
µ
S
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
2
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IPS042G
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified.)
Symbol Parameter
Rds(on)
Idss1
@Tj=25
o
C
Min.
o
Typ.
370
590
0.5
5
52
53
8.1
1.6
90
130
Max. Units Test Conditions
500
900
25
50
56
60
9.5
2
200
250
mΩ
Vin = 5V, Ids = 1A
Vcc = 14V, Tj = 25
o
C
µA
Vcc = 40V, Tj = 25
o
C
Id = 20mA
(see Fig.3 & 4)
Id=Ishutdown
(see Fig.3 & 4)
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
ON state resistance Tj = 25 C
Tj = 150
o
C
Drain to source leakage current
Drain to source leakage current
Drain to Source clamp voltage 1
Drain to Source clamp voltage 2
IN to Source clamp voltage
IN threshold voltage
ON state IN positive current
OFF state IN positive current
—
—
0
0
47
50
7
1
25
50
Idss2
@Tj=25
o
C
V
clamp 1
V
clamp 2
Vin
clamp
Vin th
Iin, -on
Iin, -off
V
µA
Switching Electrical Characteristics
Symbol
Parameter
Ton
Tr
Trf
Toff
Tf
Qin
Turn-on delay time
Rise time
Time to 130% final Rds(on)
Turn-off delay time
Fall time
Total gate charge
Vcc = 14V, Resistive Load = 20Ω, Rinput = 1kΩ, 100
µ
s
pulse, T
j
= 25
o
C, (unless otherwise specified).
Min.
0.05
0.5
—
0.5
0.5
—
Typ. Max. Units Test Conditions
0.2
1.3
5
1.6
1.5
1
0.5
2.5
—
2.5
2.5
—
See figure 2
µ
s
See figure 2
nC
Vin = 5V
Protection Characteristics
Symbol Parameter
T sd
I sd
V
reset
Treset
EOI_OT
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
Short circuit energy (see application note)
Min.
—
1.1
1.5
2
—
Typ.
165
1.7
2.3
10
400
Max. Units Test Conditions
—
2.2
3
40
—
C
A
V
µs
µJ
o
See fig. 1
See fig. 1
V in = 0V, Tj = 25
o
C
Vcc = 14V
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IPS042G
Functional Block Diagram
All values are typical
DRAIN
47 V
4000Ω
200 k
Ω
IN
8.1 V
80
µ
A
S
R
Q
Q
I sense
T > 165°c
I > 1sd
SOURCE
Lead Assignments
D1
D1
D2 D2
1
S1
In1
S2 In2
8 Lead SOIC
4
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IPS042G
Vin
5V
0V
90 %
Vin
10 %
Ids
I shutdown
Isd
t < T reset
t > T reset
Tr-in
90 %
Ids
T
Tsd
(165 °c)
10 %
Td on
tr
T shutdown
Td off
tf
Vds
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
Vin
L
Rem : V load is negative
during demagnetization
V load
+
R
D
14 V
-
Ids
Vds clamp
Vin
Vds
( Vcc )
5v
0v
IN
S
Vds
Ids
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
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