Data Sheet No. PD60297
IPS2041(R)(L)PbF
INTELLIGENT POWER LOW SIDE SWITCH
Features
•
•
•
•
•
•
•
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
ESD protection
Optimized Turn On/Off for EMI
Diagnostic on the input current
Product Summary
Rds(on)
130m
Ω
(
max.)
Vclamp
68V
Ishutdown
5A (typ.)
Packages
Description
The IPS2041(R)(L)PbF is a three terminal Intelligent
Power Switch (IPS) that features a low side MOSFET with
over-current, over-temperature, ESD protection and drain
to source active clamp. This device offers protections and
the high reliability required in harsh environments. The
switch provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165°C or
when the drain current reaches 5A. The device restarts
once the input is cycled. A serial resistance connected to
the input provides the diagnostic. The avalanche capability
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations.
DPak
IPS2041RPbF
SOT223
IPS2041LPbF
Typical Connection
+Bat
Load
D
IN
Input R
Input Signal
V Diag
1
Control
S
2
3
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IPS2041(L)(R)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Vds
Vds cont.
Vin
Isd cont.
Pd
Parameter
Maximum drain to source voltage
Maximum continuous drain to source voltage
Maximum input voltage
Max diode continuous current (limited by thermal dissipation) Rth=125°C/W
Maximum power dissipation (internally limited by thermal protection)
Rth=125C°/W
Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω
Between drain and source
Other combinations
Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω
Between drain and source
Other combinations
Max. storage & operating temperature junction temperature
Min.
-0.3
-
-0.3
⎯
⎯
⎯
⎯
⎯
⎯
Max.
60
35
6
1.4
1
4
3
0.5
0.3
150
Units
V
V
V
A
W
ESD
kV
Tj max.
-40
°C
Thermal Characteristics
Symbol
Rth1
Rth2
Rth1
Rth2
Rth3
Parameter
Thermal resistance junction to ambient IPS2041L
Thermal resistance junction to ambient with 1” square footprint
Thermal resistance junction to ambient IPS2041R D-Pak std. footprint
Thermal resistance junction to ambient IPS2041R D-Pak 1” sqr. footprint
Thermal resistance junction to case IPS2041R D-Pak
Typ.
100
50
70
50
4
Max.
⎯
⎯
⎯
⎯
⎯
Units
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
Parameter
Min.
4
0
⎯
Max.
5.5
0.5
1.4
5
10
1
Units
A
k
Ω
mH
µs
VIH
High level input voltage
VIL
Low level input voltage
Ids
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V,Rth=100°C/W
Rin
Recommended resistor in series with IN pin to generate a diagnostic
Max L
Max recommended load inductance (including line inductance) (1)
Max. t rise
Max. input rising time
(1) Higher inductance is possible if maximum load current is limited - see figure 11
0.5
⎯
⎯
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IPS2041(L)(R)PbF
Static Electrical Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol
Rds(on)
Idss1
Idss2
V clamp1
V clamp2
Vin clamp
Vth
Iin, on
Iin, off
Parameter
ON state resistance Tj=25°C
ON state resistance Tj=150°C(2)
Drain to source leakage current
Drain to source leakage current
Drain to source clamp voltage 1
Drain to source clamp voltage 2
IN to source pin clamp voltage
Input threshold voltage
ON state IN positive current
OFF state IN positive current
( after protection latched )
Min.
⎯
⎯
⎯
⎯
Typ.
100
180
0.01
0.04
68
68
6.2
2
40
250
Max.
130
240
1
2
⎯
Units
mΩ
µA
Test Conditions
Vin=5V, Ids=1A
Vcc=14V, Tj=25°C
Vcc=50V, Tj=25°C
Id=20mA See fig. 3 & 4
Id=1A
Iin=1mA
Id=50mA
Vin=5V
63
⎯
5.5
1.1
15
150
75
7.5
2.7
80
350
V
µA
Switching Electrical Characteristics
Vcc=14V, Resistive load=10Ω, Rinput=50Ω, Vin=5V, Tj=25°C
Symbol
Tdon
Tr
Tdoff
Tf
Eon + Eoff
Parameter
Turn-on delay time to 20%
Rise time 20% to 80%
Turn-off delay time to 80%
Fall time 80% to 20%
Turn on and off energy
Min.
0.4
0.2
1
0.3
⎯
Typ.
1.3
0.9
3
1.3
12
Max.
4
2
8
3
⎯
Units
µs
µJ
Test Conditions
See figure 2
Protection Characteristics
Symbol
Tsd
Isd
OV
Parameter
Min.
150(2)
4
52
1.1
15(2)
Typ.
165
5.5
55
1.6
50
Max.
⎯
Units
°C
A
V
V
µs
Test Conditions
See figure 1
See figure 1
Over temperature threshold
Over current threshold
Over voltage protection ( not active when
the device is ON )
Vreset
IN protection reset threshold
Treset
Time to reset protection
(2) Guaranteed by design
7
⎯
2
500
Vin=0V, Tj=25°C
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IPS2041(L)(R)PbF
Lead Assignments
(2) D
3- Vcc
1- In
2- D
3- S
1 2 3
1 2 3
SOT223
D Pak
Functional Block Diagram
All values are typical
DRAIN
66V
IN
75Ω
1kΩ
20kΩ
75V
150kΩ
S
R
Q
Q
Vds > OV
6V
Tj > 165°C
I > Isd
1kΩ
SOURCE
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IPS2041(L)(R)PbF
All curves are typical values. Operating in the shaded area is not recommended.
Vin
Ids
Isd
Ishutdown
t<T reset
t>T reset
80%
Vin
20%
Tr-in
80%
Tj
Tsd
165°C
Tshutdown
Ids
20%
Td on
Tr
Td off
Tf
Vdiag
normal
fault
Vds
Figure 1 – Timing diagram
Figure 2 – IN rise time & switching definitions
Vin
T clamp
L
Rem : During active clamp,
Vload is negative
Ids
Vds clamp
R
D
S
V load
+
14V
-
Vds
Ids
IN
5V
0V
Vds
Vin
Vcc
See Application Notes to evaluate power dissipation
Figure 3 – Active clamp waveforms
Figure 4 – Active clamp test circuit
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