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GSMBTA14

Description
N P N E P I T A X I A L P L A N A R T R A N S I S T O R
File Size142KB,2 Pages
ManufacturerETL [E-Tech Electronics LTD]
Download Datasheet View All

GSMBTA14 Overview

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

ISSUED DATE :2005/08/31
REVISED DATE :2006/05/10B
G S M B TA 1 4
Description
Package Dimensions
NP N EP ITAX I AL PL ANAR T RANSI STOR
The GSMBTA14 is designed for Darlington amplifier applications.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
30
30
10
500
225
Unit
:
:
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Cob
Min.
30
30
10
-
-
-
-
10K
20K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
unless otherwise noted)
Max.
Unit
-
-
-
100
100
1.5
2.0
-
-
-
6
MHz
pF
V
V
V
nA
nA
V
V
I
C
=100uA, I
E
=0
I
C
=100uA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
Test Conditions
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
GSMBTA14
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