Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complementary
to 2SA1104
・High
Power Dissipation
・High
Current Capability
APPLICATIONS
・Audio
power amplifier
・DC
TO DC Converter
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC2578
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
140
100
6
7
70
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC2578
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CBO
Collector-base breakdown voltage
I
C
=5mA; I
E
=0
140
V
V
(BR)CEO
V
(BR)EBO
Collector-emitter breakdown voltage
I
C
=10mA ;R
BE
=∞
I
C
=0 ;I
E
=5mA
100
V
Emitter-base breakdown voltage
6
V
I
CBO
Collector cut-off current
V
CB
=100V; I
E
=0
0.1
mA
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
0.1
mA
h
FE1
DC current gain
I
C
=1A ; V
CE
=5V
55
160
h
FE2
DC current gain
I
C
=3A ; V
CE
=5V
50
V
CE(sat)
Collector-emitter saturation voltage
I
C
=3A ; I
B
=0.3A
2
V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2578
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
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