
8K X 8 EEPROM 3V, 200 ns, PQCC32, PLASTIC, LCC-32
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Parts packaging code | QFJ |
| package instruction | QCCJ, |
| Contacts | 32 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum access time | 200 ns |
| Other features | 100000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS |
| Data retention time - minimum | 200 |
| JESD-30 code | R-PQCC-J32 |
| JESD-609 code | e3 |
| length | 13.97 mm |
| memory density | 65536 bi |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 8192 words |
| character code | 8000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 8KX8 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | QCCJ |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Programming voltage | 3 V |
| Certification status | Not Qualified |
| Maximum seat height | 3.56 mm |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 2.7 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | J BEND |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 11.43 mm |
| Maximum write cycle time (tWC) | 3 ms |
| Base Number Matches | 1 |