Preliminary
Data Sheet
N0603N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0559EJ0100
Rev.1.00
Nov 07, 2011
The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
•
Low on-state resistance
R
DS (on
)
= 4.6 mΩ MAX. (V
GS
= 10 V, I
D
= 50 A)
•
Low input capacitance
C
iss
= 7730 pF TYP. (V
DS
= 25 V, V
GS
= 0 V)
•
High current
I
D(DC)
= ±100 A
•
RoHS Compliant
Ordering Information
Part No.
N0603N-S23-AY
∗
1
Lead Plating
Pure Sn (Tin)
Packing
Tube
50 p/tube
Package
TO-262
1.8 g TYP.
Note:
∗
1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (T
A
= 25°C, all terminals are connected)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
∗
1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
∗
2
Single Avalanche Energy
∗
2
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
Ratings
60
±20
±100
±400
156
1.5
150
−55
to
+150
55
300
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance
2
Channel to Ambient Thermal Resistance
∗
R
th(ch-C)
R
th(ch-A)
0.80
83.3
°C/W
°C/W
Notes:
∗
1. PW
≤
10
μ
s, Duty Cycle
≤
1%
∗
2. Starting T
ch
= 25°C, R
G
= 25
Ω,
V
DD
= 30 V, V
GS
= 20
→
0 V, L = 100
μ
H
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 1 of 6
N0603N
Chapter Title
Electrical Characteristics (T
A
= 25°C, all terminals are connected)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
∗
1
Drain to Source On-state
1
Resistance
∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
∗
1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
∗
Symbol
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
MIN.
TYP.
2.0
35
3.7
7730
560
290
35
12
76
14
133
38
38
MAX.
1
±100
4.0
4.6
Unit
μ
A
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 50 A
V
GS
= 10 V, I
D
= 50 A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 30 V, I
D
= 50 A,
V
GS
= 10 V,
R
G
= 0
Ω
V
DD
= 48 V,
V
GS
= 10 V,
I
D
= 100 A
I
F
= 100 A, V
GS
= 0 V
I
F
= 50 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
1.5
44
61
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 2 of 6
N0603N
Chapter Title
Typical Characteristics (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
200
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
150
100
50
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
C
- Case Temperature -
°C
1000
R
DS(on)
Limited
I
D
- Drain Current - A
PW = 300 µs
1 ms
10 ms
100
10
Power Dissipation Limited
1
T
C
= 25°C
Single Pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
Single pulse
100
R
th(ch-A)
= 83.3°C/W
10
R
th(ch-C)
= 0.80°C/W
1
0.1
0.01
0.1 m
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 3 of 6
N0603N
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
400
V
GS
= 10 V
I
D
- Drain Current - A
100
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I
D
- Drain Current - A
300
T
A
= 125°C
75°C
25°C
−25°C
200
100
Pulsed
0
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
4
| y
fs
| - Forward Transfer Admittance - S
100
3
10
T
A
= 125°C
75°C
25°C
−25°C
2
1
1
0.1
V
DS
= 10 V
Pulsed
0.01
0.01
0.1
1
10
100
V
DS
= 10 V
I
D
= 1.0 mA
-50
0
50
100
150
0
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10
V
GS
= 10 V
8
6
4
2
Pulsed
0
1
10
100
1000
25
20
15
10
5
0
0
5
10
15
20
I
D
= 50 A
Pulsed
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 4 of 6
N0603N
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
8
C
iss
, C
oss
, C
rss
- Capacitance - pF
100000
6
10000
C
iss
4
1000
V
GS
= 0 V
f = 1.0 MHz
100
0.01
0.1
1
2
V
GS
= 10 V
I
D
= 50 A
Pulsed
-50
0
50
100
150
C
oss
C
rss
10
100
0
T
ch
- Channel Temperature -
°C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
1000
t
d (on)
, t
r
, t
d (off)
, t
f
- Switching Time - ns
14
t
f
t
d(off)
V
GS
- Gate to Source Voltage - V
12
10
8
6
4
2
0
I
D
= 100 A
0
20
40
60
80
100
120
140
V
DD
= 12 V
30 V
48 V
100
t
d(on)
10
t
r
V
DD
= 30 V
V
GS
= 10 V
R
G
= 0
Ω
1
10
100
1
0.1
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
V
GS
= 10 V
I
F
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
100
100
10
1
0.1
Pulsed
0.01
0
0.4
0.8
1.2
1.6
0V
10
V
GS
= 0 V
di/dt = 100 A/µs
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 5 of 6
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