, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
Silicon
Transistors
029E9-10
D29E9J1-10J1
D33D29-30
D33D29J1-30J1
The PNP D29E9-10 series and the NPN D33D29-30 series are silicon,
planar, passivated, epitaxial transistors intended for general purpose appli-
cations. These complementary pairs are especially suited for the drive stage
in high power amplifiers, and for control and television circuitry.
FEATURES:
• Low Collector Saturation Voltage • Excellent Beta Linearity
over a Wide Current Range • Heatsinking Available on All Units
NOTE: Observe proper polarity on biases for PNP's and NPN's.
absolute maximum ratings:
(25°C) (unless otherwise specified)
Voltages
Collector to Emitter
Emmitter to Base
Collector to Base
Collector to Emitter
Current
VCEO
VEBO
VCBO
VCKS
Ic
ICM
60
5
70
70
750
1000
Volts
Volts
Volts
Volts
Collector (Continuous)
Collector (Pulsed, 300 Msec.,
pulse width,-2% duty cycle)
Dissipation
Total Power (Free Air,
500
T,^25°C)*
PT
Total Power with Jl Heatsink
700
PT
(Free Air, T
A
- 25°C) **
Total Power with Jl Heatsink
1000
(Case Temp., T
c
- 25°C) ***
P
T
Temperature
-65 to +150
Storage
Operating
-65 to +150
Lead soldering
(Yi«"
± %a"
T
L
+ 260
from case for 10 sec. max.)
*Derate 4.0 mW/°C increase in ambient temperature above 25°C. **Derate 5.6 mW/°C increase
in ambient temperature above 25°C. ***Derate 8.0 mW/°C increase in case temperature above 25"C.
electrical characteristics:
(25°C) (unless otherwise specified)
NOTE: Characteristics apply to both heatsinked and non-heatsinked devices.
STATIC CHARACTERISTICS
Collector Cutoff Current
(v
co
= 25V)
(V
c
» = 25V, Ti = 100°C)
Forward Current Transfer Ratio
ICES
ICES
Min.
Max.
100
15
GO
100
20
25
60
70
nA
."A
(Io = 2mA,Vca = 2V)
D29E9/D33D29
D29E10/D33D30
(Ic = 500mA, VCE = 2V)
D29E9/D33D29
D29E10/D33D30
Collector Emitter Breakdown Voltage
hn
h™
'*kn
**h
PB
**V
(B
R>CEO
V<BH>CES
V<BR)EBO
120
200
do = 10mA)
(Ic = 10 f i A )
Volts
Volts
Volts
0.75
1.2
Emitter Base Breakdown Voltage
(II =
10^«A)
Collector Saturation Voltage
do = 500 mA, IB = 50 mA)
Base Saturation Voltage
** VCB<SAT>
Volts
Volts
do = 500 mA, IB = 50 mA)
DYNAMIC CHARACTERISTICS
Output Capacitance, Common Base
(VcB = 10V, f = 1MH
Z
)
Input Capacitance, Common Base
(ViB = 0.5V, f = 1 MHz)
Gain Bandwidth Product
** V
BE
,
S4
T,
Ccb
C.
6
15
55
80
120
P
F
PP
MHz
do = 50 mA, VCE = 2V, f = 20 MHz)
D29E9/D33D29
ft
D29E10/D33D30
ft
"Pulse Conditions: Pulse width < 300/Js Duty cycle <
2%
ST - Low Power RF
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