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IR413

Description
High -voltage NPN silicon transistors designed for medium-to-high- voltage inverters
File Size469KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet View All

IR413 Overview

High -voltage NPN silicon transistors designed for medium-to-high- voltage inverters

, O
ne..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
I R 413 (SILICON)
High -voltage NPN silicon transistors designed
TO-3
for medium-to-high- voltage inverters, converters, reg-
ulators and switching circuits.
Colltctor connected to CMC
I PIN I BASE
1COIMCTM
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter- Base Voltage
Collector Current — Continuous
Base Current
Total Device Dissipation 9 T_ - 25"C
Derate above 25*C
Operation Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage I"
(I
c
» 100 mAdc, I
B
=. 0)
Collector Cutoff Current
(V
CE
.400Vdc. V
KB(of|)
.1.5Vdc,
T
C
- 125"C)
Emitter Cutoff Current
(V
BE
. 5. 0 Vdc, I
c
= 0)
ON CHARACTERISTICS
DC Current Gain-Ill
(I
c
= 0. 5 Adc, V
CE
=. 5. 0 Vdc)
(I
c
= 1.0 Adc, V
C E
> 5.0 Vdc)
Collector-Emitter Saturation Voltage ni
(I
c
. 0. 5 Adc, Ig . 0. 05 Adc)
Base-Emitter Saturation Voltage I'l
(I
c
> 0. 5 Adc, 1
B
- 0. 05 Adc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(I
c
=. 200 mAdc, V
CE
- lOVdc,
Symbol
V
CEX
Unit
400
400"
10
2.0
125
1. 1
-65 to +150
-65 to +200
Vdc
Vdc
Vdc
Adc
V
CB
V
EB
s
'B
P
D
T
J
T
s*
Ada
watts
w/-c
•c
"C
Symbol
Max
1.0
Unit
°c/w
ejc
<T
C
= 25'c
u
ni.iio»t™iitnot«»
Symbol
Min
Max
Unit
BV
CEO(sus)
Vdc
325
!
CEX
0.25
0.5
mAdc
mAdc
mAdc
-
'EBO
-
5.0
B
F8
20
15
-
80
V
CE(sat)
Vdc
0.8
V
BE(sat)
Vdc
1.25
<r
MHz
2.5
-
f . 1. 0 MHz)
II) PW
(*
300 MS, Duty Cycle 4 2.
<f
a
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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