IRF631 datasheet, PDF - EEWORLD Datasheet

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IRF631: DescriptionPOWER, FET; CategoryDiscrete semiconductor The transistor; File Size102KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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IRF631 Overview

POWER, FET

IRF631 Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknow
Base Number Matches	1

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LJnc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

IRF230-233/IRF630-633

MTP12N18/12N20

N-Channel Power MOSFETs,

12 A, 150-200 V

Power And Discrete Division

Description

These devices are n-channel, enhancement mode, power

MOSFETs designed especially for high power, high speed

applications, such as switching power supplies, UPS, AC

and DC motor controls, relay and solenoid drivers and

high energy pulse circuits.

Low RDS(on)

Rated at ±20 V

Silicon Gate for Fast Switching Speeds

'oss.

os(on), Specified at Elevated Temperature

Rugged

Low Drive Requirements

Ease of Paralleling

TO-204AA

TO-220AB

Product Summary

ID at

Part Number

IRF230

IRF231

IRF232

IRF233

IRF630

IRF631

IRF632

IRF633

MTP12N18

MTP12N20

VDSS

ID at

Tc = 100°C

6.0 A

5.0 A

6.0 A

5.0 A

8.5 A

RDS

(on)

= 25°C

9.0 A

B.O A

8.0 A

9.0 A

8.0 A

12 A

Case Style

TO-204AA

200 V

160 V

200 V

150 V

200 V

150 V

200 V

150 V

180 V

200 V

0.40

0.40 n

o.so n

0.40

TO-220AB

o.so n

0.35 n

Not«

For information concerning connection diagram and package outline, refer to

Section 7.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Oiinlitv

IRF631 Related Products

	IRF631	IRF630	IRF230	IRF231	IRF232	IRF233	IRF632	IRF633	MTP12N18	MTP12N20
Description	POWER, FET	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Maker	-	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor

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