This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Features
• 3.5A, 400V
' r
DS(0
N)= 1.00012
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Ordering Information
PART NUMBER
IRFF330
PACKAGE
TO-205AF
BRAND
IRFF330
Symbol
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-205AF
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRFF330
Absolute Maximum Ratings
T
c
= 25°C, Unless Otherwise Specified
IRFF330
400
400
3.5
14
±20
25
02
300
-55 to 150
UNITS
V
V
A
A
V
W
Drain to Source Voltage (Note 1 )
Drain to Gate Voltage (R
GS
= 20k£3) (Note 1 )
Continuous Drain Current
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Maximum Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy Rating (Note 4)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
V
DS
• •
V
DGR
.. ID
• • 'DM
V
GS
..PD
EAS
• TJ.TSTG
w/°c
mj
°C
T
L
T
pkg
300
260
°c
°c
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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