Dna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFM460
PACKAGE
500V, N-CHANNEL
FEATURES
•
•
•
•
•
•
Isolated Case
Hermetically Sealed Package
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Ceramic Eyelets
MIL SIX Screening Available
TO-254
CASE OUTLINE
APPLICATIONS
•
•
•
•
High Reliability Power Supplies
Switch Mode Power Supplies
Battery Back-Up Supplies
High Speed Power Switching
430
-150 TYP.
K.1MTVP.
Pin 1:D Pin 2: S Pin 3: G
Absolute Maximum Ratings
Parameter
Continuous Drain Current Ip @ Tc = 25° C, VGS @ 10V
Continuous Drain Current Ip @ Tc = 1 00°C, V
G
s @ 1 0 V
Pulse Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage VGS
Peak Diode Recovery
dv/dt
IDM
P
D
@ Tc =25° C
Maximum
19
12
76
250
2.0
±20
3.5
-55 to 150
Units
A
A
A
W
W/°C
V
V/ns
°C
Operating & Storage Temperature Tj & TSTG
Quality
Semi-Conductors
IRFM460
Static @ Tj = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage V
(B
R)DSS
Static Drain to Source On-Resistance Ros(on)
Gate Threshold Voltage
V
G
s
Min.
500
—
2.0
—
Typ.
—
—
—
—
—
—
—
Max.
—
0.27
0.31
4.0
25
Units
Conditions
V
VGS = 0V, I
D
= 1 .OmA
VGS = 10V, b = 12A
VQS = 10V, b = 19A
VDS= V
GS
, b = 250uA
V
DS
= 0.8 x Max rating, V
G
s = 0V
u
V
Drain-to-Source Leakage Current
bss
uA
—
250
100
nA
-100
V
DS
= 0.8 x Max Rating V
G
s = 0V,
Tj=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
IGSS
—
—
VGS = 20V
VGS = -20V
Dynamic @ Tj = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") charge
Turn-on-Delay Time
Rise Time
Turn-Off-Delay Time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
gfs
Qg
Qgs
Qgd
td
(on)
tr
t
d
(
0
ff)
tf
Ciss
Coss
Crss
LD
Ls
Min.
13
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
4300
Max.
—
190
27
135
35
120
130
98
—
—
—
—
Units
Conditions
S
V
DS
= 15V, bs = 12A
I
D
= 19A
VDS
=
0.5 x Max Rating
VGS - 1 0V
nC
VDD = 250V
b
—
-I QA
R_ - 0 ^"SU
VGS = 0V
pF
V
DS
= 25V
f = 1.0 MHZ
Measured from drain lead, 6mm from
package to center of die.
Measured from the source lead, 6mm
from package to source bonding pad.
1000
250
8.7
8.7
nH
—
IRFM460
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
EAS
IAR
EAR
Typ.
—
—
—
Max.
1200
19
25
Units
mJ
A
mJ
Thermal Resistance
Parameter
Junction-to-case
Case-to-Sink, flat, Greased Surface
Junction-to-ambient
Rejc
R
9
cs
R
ejA
Typ.
—
0.21
—
Max.
0.5
—
48
°C/W
Units
Diode Characteristics
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
Is
ISM
VSD
tn-
Qrr
ton
Min.
—
—
—
—
—
Typ.
—
—
—
—
—
Max.
19
A
76
1.8
580
8.1
V
ns
uC
Tj = 25°C, I
S
=19A, V
GS
=OV
Tj = 25°C, I
F
=19A
Ql/ut - lUUA/US
Units
Conditions
V
DD
D 50V
Intrinsic turn-on time is negligible
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