<^Emi-donductoi ^Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFP360, IRFP362
Avalanche-Energy-Rated
N-Channel Power MOSFETs
23 A and 20 A, 400 V
rosion) = 0.20 O and 0.25 O
Features:
•
Single pulse avalanche energy rated
•
SOA
is power-dissipation /imited
•
Nanosecond switching speeds
•
Linear transfer characteristics
•
High input impedance
N-CHANNEL ENHANCEMENT MODE
D
MCS-4MM
TERMINAL DIAGRAM
The IRFP360 and IRFP362 are advanced power MOSFETs
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of opera-
tion These are n-channel enhancement-mode silicon-gate
power field-effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits
The IRFP-types are supplied in the JEDEC TO-247 plastic
package.
TERMINAL DESIGNATION
DRAIN
(TAB)
O
JEDEC TO-247
ABSOLUTE MAXIMUM RATINGS
Parameter
'D
&
T
C - 25*C
]
0
IHFP360
23
14
IBFP362
20
13
Units
A
A
A
W
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Currant ®
®
T
C * 100°C
IQM
P
D
92
250
20
±20
80
®
T
C "
25
°
c
Max Power Dissipation
Linear Derating Factor
wrc
V
mj
V
QS
EAS
I
AR
Tj
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Erfjrgy ®
Avalanche Current ©
Operating Junction
Storaoe Temperature Rang,*
Lead Temperature
1200
(See
f<9
14)
23
A
-55 to 150
300 (0.083 in (1 6mm) from case for 10s)
•c
•c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> Nl Semi-Conductors is believed to be both accurate and reliable at the time of going
(o press.
However,
NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use
I Semi-Conductors enuniniges customers to verity that datasheets ;ire current before placing orders.
IRFP360, IRFP362
ELECTRICAL CHARACTERISTICS
At Case Temperature (Tj) = 25° C Unless Otherwise
Specified
Parameter
BV
DSS
Type
IRFP380
IHFP362
IRFP360
IRFP362
IRFP3SO
IRFP362
Mm
400
—
-
23
20
2.0
14
-
Typ.
-
0.18
0.20
-
-
21
-
-
-
-
68
17
24
22
94
80
66
5.0
Max
-
020
0.25
-
4.0
-
250
1000
500
-500
100
25
36
33
140
120
99
Units
V
Q
A
V
Tesi Conditions
VQS - 0V. I
D
- 2SOMA
Drain-to-Source Breakdown Voltage
Static Drain-to-Source
On-State Resistance CD
On-Stale Dram Current @
R
DS(on)
VQS . iov. I
D
- ISA
V
DS>
'D(on)
!D(on)
x R
DS<on)
M
«
V
GS
-
V
DS
10V
V
GS-
v
GS(th)
O*« Threshold Voltage
Forward Transconductance (3)
Zef
°
Gat
*
ALL
ALL
-
'D -
25
°MA
9(5
'OSS
S(D)
V
DS
£
50V, IDS - 13A
V
DS
- Max Rating. V
GS
- 0V
VottAfl* Drain Current
ALL
-
M*
nA
nA
nC
nC
nC
ns.
ns
ns
ns
nH
VDS * °
8
«
V
GS
- 20V
V
GS
. -20V
Ma
*
Flaling. V
QS
- 0V. Tj . 12S°C
'CSS
'GSS
Qg
Q
gs
Qgo-
"dfon)
t
r
tyoff)
1,
LQ
Gate-to-Source Leakage Forward
Gale-to-Source Leakage Reverse
Total Gate Charge
Gate- to- Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Deiay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
ALL
ALL
ALL
ALL
-
-
-
-
-
VQS - iov, ID - 25A
VDS * °
8
"
Max
R'linfl
S«e Fig 16
(Indepanden! of operating temperature)
VDQ - 200V, ID - 25A, R
G
- 4 3O
ALL
ALL
ALL
ALL
ALL
-
-
-
-
R
D
- 7.50
See Fig 15
(Independent of operating temperature)
Measured from the drain
lead. 6mm (0.25 in.) from
package to center of die.
Measured from the source
lead. 6mm (0.25 in.) from
package to source
bonding pad.
V
QS
- 0V. VDS '
I - 1.0 MHz
See Fig 10
25V
Modified MOSFET symbol
snowing the internal
inductances
_ls
M*"* 1
M lpT
L
'
^V^CX
LS
Internal Source Inductance
ALL
13
nH
C
iM
C^,
C
ry8
R«oc
Rihca
RIUJA
input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Mounting torque
ALL
ALL
ALL
ALL
ALL
ALL
ALL
-
4000
550
97
-
0.24
-
-
-
—
0.50
-
40
.
10
PF
PF
pF
-
-
-
•c/w
•c/w
-C/W
in.etbs.
Mounting surface flat, smooth, and greased
Typical socket mount
Standard 6-32 screw
-
-
(]) Repetitive Rating; Pulse width limited by
maximum junction temperature (see figure 5)
Refer TO current HEXFET reliability report
® @ V
OD
» 50V. Starting Tj = 25°C,
L - 4.0mH, R
G
= 25O. Peak I
L
» 23A
Pulse width < 300 MS; Duty Cycle 5 2%
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
(5
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Oiode) ®
Type
ALL
Mar
-
-
-
200
3.1
Typ.
-
Max.
23
Units
A
Test Conditions
Modified MOSFET symbol showing the integral
,-
So
Reverse p-n junction rectifier.
/j 1 J\j - 25°C. I
S
= 23A. V
GS
= 0V
'SM
ALL
-
-
460
7.1
92
1.8
1000
16
A
V
so
t
fr
QRP
to,,
Oiode Forward Voltage ©
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ALL
ALL
ALL
ALL
V
ns
MC
Tj = 25
0
C. I
F
= 2SA, di/dt - 100 A/us
Intrinsic turn on time is negligible Turn-on speed is substantially controlled by Lg + LQ.
PCB Design
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