«_/
One..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRFZ10
HEXFET* Power MOSFET
Dynamic dv.'dt Rating
175-C Operating Ternp«ralijr«
Fasl Switching
Fn=,e rl Pa'alleing
Simple Drive Requirements
= 0.2012
The TO-220 package is universally tirt»furr«d luf all rommercial-industnal
appkaliors at oower dissipation levete 10 appiojumalety 50 rtatts. T>j luw
tlwrmal r««stanefl AIX) ow pacNA^e cosi oi the TO-220 ccnlribute to
acceptance Ihroucfioul the industry.
G
TO-220AB
Gate
D
Drain
S
Source
Absolute Maximum Ratings
In
<&
To = 25"C
I'J*' T O " 100'C
I™
PC @ Tc - 25"C
PaiErne-tef
Ccnlmucus Drar Currcni, Vi/: S ;o V
Continuous Drar Curreni, VGS 9 1 0 V
Pulsed Drain Current I
Power Dissipation
Unear Denting Factor
Gale-10-Sou'ce Voltage
:
-ir;gly
Max_
10
72
40
43
0.29
120
47
_
.Jll!'.,
A
|
W
W/"C
V
EAB
J'/'Ut
Tj
TSTC.
KLli^ A.,ri i-.rtJi* :£nf-'i|v
mj
V/ns
Peak Diode Recovery dv/dt -1
Operating JuricJion and
Storage Tempwature Ran^e
Soldering Temperature, for 10 sGCords
-55 10+175
-c
300 {1 6mm from case)
10
tof-ir,
(1.1 N*m)
Thermal Resistance
\
1
;4
V n.
• 1'
-
..
- :-
-I,.,,..
J.jnci of-io-C,-s:'
•..!..-•. in-oi-K =.. it. Grossed yj-tace
i: . • • --r - • - Arrhieni
Wax
3.5
62
...I-.
—
—
0.50
—
•ow
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRFZ10
Electrical Characteristics @ Tj = 25 C (unless otherwise specified)
Parameter
Drain-to-Sourcc Breakdown Voltage
VjWjOGE
\VHK
;
.J::..
;
IT. Breakdown Voltage Temp. Coefficient
-; ,• ,
Static Drain-to- Source On-Resistance
Gate Threshold Voltage
Vast*)
Forward Transconductance
g*
loss
IGSS
Qa
QjB
M• .
60
y::.
Max.
—
O.CB3
—
4.0
2.0
24
—
_
—
25
250
1 1)0
Unrs
Test Conditions
V
Vas-OV. 10- 250
f
iA
we
Hefer9ncfitr>?5'0. h= 1mA
v.-,-
••:.',•
i-: HOA -i
V
VijS=V
ti
.;. ,;._250uA
s
Vos=25V. b=6.0A
•<•
HA
PA
Drain-to-Source Leakage Current
Gate-to-Sourc* Forward Leakage
Gate-lo-Sourcc Reverse Leakage
1 Total Gate Charge
Gate-to-Soufce Charge
Gate-lo-Drain ('Miller"} Charge
1 Turn-Oi Delay 1 im<;
Pi . 1 -[.;
1 Turn-Oft Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capac tance
RPVHISC Transfer Cep.nctr\ncr-
j —
—
—
10
-30
V-::-;=60V V
;s
=OV
Voa=48V. V
GS
=OV. Tja150"C
v
j;:-v
V.-.,-,- 20V
:••
1GA
-1'JC)
I'
...
5.8
—
nC
Vos=48V
Q*
toion]
I,
tdiati!
tr
Lo
Ls
13
—
—
19
4.5
7.5
—
—
rh
—
R
G
-24li
HD=2,7U See Figure
Between lead.
6 mm (0-25in.)
from package
and center erf
die contact
10:1:
/ftJi
"
•i
f3f
=
C«
Cr
M
Cl66
30C
! 60
?0
—
pF
V
DS
=25V
(-1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Is
ISM
M in .
Typ
Max.
10
A
_
40
Un Is
Test Conditions
V^n
trr
Q
n
ton
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Chatge
Forward Turn-On Time
.' \-<f,i
-i:vcrs::
[i-n iiri,- I ::-n ii cdn
-2b
~
^: r
4
'•
'
-
I
f)
-
u
—
70
1.6
140
V
"S
c. -
-10A.
v - : - - : - v
C. Ip-
:10A
nv I
is •.'.:
~
0.20
G.40
!-C d .'dt- 1
Inlrnsic turn-on l»n« is negtogcOle (turn on
(r-
-Ir-'ii-,.-!
,--r
Notes:
•i.' Repetitive rating; pulse width (in t*d :-
max junction temoerature (See figure 11}
isoilOA, dt'dt<90Ayjts,
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