NTE53020 datasheet, PDF - EEWORLD Datasheet

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NTE53020: DescriptionSilicon Bridge Rectifier, 50A; CategoryDiscrete semiconductor diode; File Size60KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com; Environmental Compliance

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NTE53020 Overview

Silicon Bridge Rectifier, 50A

NTE53020 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NTE
package instruction	S-PUFM-D4
Reach Compliance Code	unknow
ECCN code	EAR99
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	S-PUFM-D4
Maximum non-repetitive peak forward current	450 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	50 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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NTE53016 thru NTE53020

Silicon Bridge Rectifier, 50A

Features:

Diffused Junction

Low Reverse Leakage Current

Low Power Loss, High Efficiency

Electrically Isolated, Low Profile Epoxy Case for Maximum Heat Dissipation

Mounting: Through Hole with #10 Screw

Maximum Ratings and Electrical Characteristics:

= +25°C unless otherwise specified.

Single Phase, Half Wave, 60Hz, Resistive or Inductive Load, Note 1)

Maximum Recurrent Peak Reverse Voltage, V

RRM

NTE53016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE53018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

NTE53020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V

Working Peak Reverse Voltage, V

RWM

NTE53016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE53018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

NTE53020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V

Maximum RMS Bridge Input Voltage, V

RMS

NTE53016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V

NTE53018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V

NTE53020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V

Maximum DC Blocking Voltage, V

NTE53016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE53018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

NTE53020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V

Maximum Average Forward Rectified Output Current (T

= +60°C), I

O(AV)

. . . . . . . . . . . . . . . . . 50A

Peak Forward Surge Current (8.3ms single half wave superimposed on rated load), I

FSM

. . . 450A

Maximum Forward Voltage Drop (Per element at 25A), V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1V

Maximum Reverse Current at Rated DC Blocking Voltage Per Element, I

= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50μA

= +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500μA

t Rating for Fusing (t < 8.3ms), I

t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800A

Typical Junction Capacitance (Note 2), C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400pF

Typical Thermal Resistance, Junction−to−Case (Per element, Note 3), R

thJC

. . . . . . . . . . . 1.6°C/W

RMS Isolation Voltage from Case to Leads, V

ISO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V

Operating Temperature Range, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−65°

to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−65°

to +150°C

Note 1. For capacitive load, derate current by 20%.

Note 2. Measured at 1.0MHz and applied reverse voltage of 4.0VDC.

Note 3. Thermal resistance junction−to−case, mounted on a heatsink.

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