,
LJ
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
(973) 376-8960
IRG4PC40S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
V
CE
s = 600V
V
C
E(on)typ. = 1.32V
@V
GE
= 15V, I
C
= 31A
Standard Speed IGBT
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
l
c
@ T
c
= 25°C
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ©
Clamped Inductive Load Current ©
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ®
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
IC@T
C
= ioo°c
ICM
ILM
VGE
EARV
PD @ T
c
= 25°C
PD@T
C
= IOO°C
Tj
TSTG
Max.
600
60
31
120
120
±20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 Ibf-in (1.1N-m)
Units
V
A
V
mj
W
°C
Thermal Resistance
Parameter
Rejc
Recs
RIUA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
—
0.24
Max.
0.77
Units
°c/w
40
6 (0.21)
g (oz)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRG4PC40S
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
AV
(B
R)CES/ATj
V
CE(ON)
VGE(th)
AV
GE
(th/ATj
9fe
brs
bes
Win. Typ.
Parameter
—
Collector-to-Emitter Breakdown Voltage
600
Emitter-to-Collector Breakdown Voltage ®
18
—
Temperature Coeff. of Breakdown Voltage
— 0.75
—
1.32
—
Collector-to-Emitter Saturation Voltage
1.68
_
1.32
—
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage
-9.3
Forward Transconductance ©
12
21
—
—
Zero Gate Voltage Collector Current
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max.
Units
Conditions
—
V
VGE = 0V, l
c
= 250MA
V
V
G
E=OV, I
C
= 1.0A
—
—
v/°c
V
1.5
—
—
6.0
—
VGE = OV, l
c
= 1.0mA
I
C
= 31A
lc = 60A
l
c
= 31A,Tj = 150°C
VCE=V
GE
, I
C
= 250MA
VGE = 15V
See Fig. 2, 5
mV/°C VCE = V
GE
, l
c
= 250uA
s
V
CE
= 100V, I
C
= 31A
250
VGE = 0V, VCE = 600V
MA
2.0
VGE = 0V, VCE = 10V, Tj = 25°C
1000
VGE = 0V, VCE = 600V, Tj = 150°C
±100
nA
V
GE
= ±20V
Switching Characteristics @ Tj = 25°C (unless otherwise specified)
Q
a
Qge
Qgc
td(on)
tr
td(off)
tf
Ecn
Eoff
Els
td(on)
t
r
td(off)
tf
Ets
LE
Qes
Coes
C
res
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
Units
Conditions
—
100 150
lc = 31A
—
21
14
nC
V
cc
= 400V
See Fig. 8
34
51
—
VGE = 15V
—
—
22
—
18
—
Tj = 25°C
ns
—
650 980
lc = 31 A, V
cc
= 480V
—
570
380
VGE = 15V, R
G
= 10J2
Energy losses include "tail"
— 0.45 —
—
—
6.5
mJ
See Fig. 10, 11, 13, 14
— 6.95 9.9
—
—
23
Tj = 150°C,
—
—
21
lc = 31 A, V
cc
= 480V
ns
— 1000 —
VGE = 15V, R
G
= 1012
—
940 —
Energy losses include "tail"
—
12
—
mJ
See Fig. 13, 14
—
13
—
nH
Measured 5mm from package
2200
—
—
VGE = 0V
—
140
—
V
cc
= 30V
See Fig. 7
PF
26
/ = 1.0MHz
—
—
Notes:
CD
Repetitive rating; V
G
E = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
cc
= 80%(V
CES
),
(See fig. 13a)
= 20V, L = 10uH, R
G
= 10il,
®
©
Pulse width < 80us; duty factor < 0.1%.
Pulse width S.Ous, single shot.
@
G>
Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4PC40S
Case Outline and Dimensions — TO-247AC
1-^-1
NOTES:
1
DIMENSIONS & TOLERANCING
PER A N S I Y 1 4 . 5 M , 1982.
2 C O N T R O L L I N G DIMENSION : INCH.
3 D I M E N S I O N S ARE S H O W N
M I L L I M E T E R S (INCHES).
TO-247AC.
5. 90 (.626
15.30 (.602)
EH
•-.-.
I
I
/
3.65 (.143)
/
v
3. 55 (.140)
/
-$-[00 2 5 ( . 0 1 0 ) ( M ) | D
B ®|
-A-l
530(209)
, ,,', J
Q
,
-^
2
'
50 (
-
0 8 S
i
-=-1
I /
-f -r
'
;
20.30 (.800)
19.70 (.775)
A
a
-v
i
i I 5. 50 (.217) |
~
/T
1
0
5.50 (.217)
4.50 (.177)
1
2
3
t
LEAD ASSIGNMENTS
1 -GATE
2 -COLLECTOR
4 -COLLECTOR
* L O N G E R L E A D E D (20mm)
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD •-E'SUFFIX
TO PART NUMBER
I J
*
]j
I
I
r^q
|_ 4.30 (.170)
3.70 (.145)
14.80
(.583)
14.20
(.559)
:
2.40 (.094)
2.00 (.079)*
5.45
1
W
1
I
'
-
-
1.40 (.056)
1.00 (.039)
|^- 1 0.25 (.010) ®
J—
|C|A®|
JX
0.80 (.031)
0.40 (.016)
2X
3.40 (.133)
3.00 (.118)
2.60 (.102)
2.20 (.087)
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters a n d ( I n c h e s )
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