JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SA1110
・Excellent
current I
C
characteristics of forward
current transfer ratio h
FE
vs. collector
・High
transition frequency f
T
・Optimum
for the driver stage of a
40 W to 60 W output amplifier
APPLICATIONS
・For
low-frequency power amplification
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
2SC2590
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
120
5
0.5
1.0
1.2*
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Note) *: Without heat sink
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=100μA;I
B
=0
I
E
=10μA ;I
C
=0
I
C
=0.3A ;I
B
=30mA
I
C
=0.3A ;I
B
=30mA
I
C
=150mA ; V
CE
=10V
I
C
=0.5A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=50mA ; V
CB
=10V,f=200MHz
90
65
MIN
120
5
2SC2590
TYP.
MAX
UNIT
V
V
1.0
1.2
220
100
20
200
V
V
pF
MHz
h
FE-1
Classifications
Q
90-155
R
130-220
2
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