KTA1531T datasheet, PDF - EEWORLD Datasheet

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KTA1531T: DescriptionEPITAXIAL PLANAR PNP TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size73KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1531T Overview

EPITAXIAL PLANAR PNP TRANSISTOR

KTA1531T Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

LOW FREQUENCY POWER AMP, CONVERTER

ELECTRONIC GOVERNOR APPLICATIONS

KTA1531T

EPITAXIAL PLANAR PNP TRANSISTOR

FEATURES

Low Saturation Voltage

: V

CE(sat)

=0.3V(Max.) at I

=0.5A.

Complementary to KTC3531T.

DIM

MILLIMETERS

2.9 + 0.2

1.6+0.2/-0.1

0.70 + 0.05

0.4 + 0.1

2.8+0.2/-0.3

1.9 + 0.2

0.95

0.16 + 0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

CBO

CEO

EBO

stg

0.8

RATING

-30

-20

-5

-1

0.9

150

-55

)

150

UNIT

1. EMITTER

2. BASE

3. COLLECTOR

* Package mounted on a ceramic board (600

Marking

Rank

Type Name

Lot No.

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Note : h

Classification

Y:120 240,

SYMBOL

CBO

EBO

(1) (Note)

(2)

CE(sat)

BE(sat)

GR(G):200 400

TEST CONDITION

=-20V, I

=-5V, I

=-2V, I

=-50mA

=-2V, I

=-1A(Pulse)

=-500mA, I

=-50mA

=-500mA, I

=-50mA

=-10V, I

=-50mA

=-10V, I

=0, f=1MHz

MIN.

120

TYP.

-0.15

-0.85

180

MAX.

-0.1

400

-0.3

-1.2

MHz

pF-

UNIT

2001. 6. 23

Revision No : 0

TSM

1/2

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