T102F02VDB datasheet, PDF - EEWORLD Datasheet

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T102F02VDB: DescriptionSilicon Controlled Rectifier, 102000mA I(T), 200V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size720KB，7 Pages; ManufacturerEUPEC [eupec GmbH]

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T102F02VDB Overview

Silicon Controlled Rectifier, 102000mA I(T), 200V V(DRM),

T102F02VDB Parametric

Parameter Name	Attribute value
Objectid	101732348
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	15 µs
Critical rise rate of minimum off-state voltage	50 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	250 mA
Maximum leakage current	30 mA
On-state non-repetitive peak current	2800 A
Maximum on-state voltage	1.9 V
Maximum on-state current	102000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	200 V
surface mount	NO
Trigger device type	SCR

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T102F02VDB Related Products

	T102F02VDB	T102F02VDC	T102F02VDM	T102F04VDB	T102F06VBB	T102F08VBM	T102F02VBM	T102F04VBL
Description	Silicon Controlled Rectifier, 102000mA I(T), 200V V(DRM),	Silicon Controlled Rectifier, 102000mA I(T), 200V V(DRM),	Silicon Controlled Rectifier, 102000mA I(T), 200V V(DRM),	Silicon Controlled Rectifier, 102000mA I(T), 400V V(DRM),	Silicon Controlled Rectifier, 102000mA I(T), 600V V(DRM),	Silicon Controlled Rectifier, 102000mA I(T), 800V V(DRM),	Silicon Controlled Rectifier, 102000mA I(T), 200V V(DRM),	Silicon Controlled Rectifier, 102000mA I(T), 400V V(DRM),
Objectid	101732348	101732349	101732351	101732364	101732376	101732395	101732347	101732362
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Nominal circuit commutation break time	15 µs	15 µs	15 µs	15 µs	10 µs	10 µs	10 µs	10 µs
Critical rise rate of minimum off-state voltage	50 V/us	500 V/us	1000 V/us	50 V/us	50 V/us	1000 V/us	1000 V/us	500 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA
Maximum DC gate trigger voltage	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Maximum holding current	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
Maximum leakage current	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA
On-state non-repetitive peak current	2800 A	2800 A	2800 A	2800 A	2800 A	2800 A	2800 A	2800 A
Maximum on-state voltage	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Maximum on-state current	102000 A	102000 A	102000 A	102000 A	102000 A	102000 A	102000 A	102000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	200 V	200 V	200 V	400 V	600 V	800 V	200 V	400 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR

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