KTC3544T datasheet, PDF - EEWORLD Datasheet

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KTC3544T: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size75KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/; Environmental Compliance

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KTC3544T Overview

EPITAXIAL PLANAR NPN TRANSISTOR

KTC3544T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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SEMICONDUCTOR

TECHNICAL DATA

RELAY DRIVERS, LAMP DRIVERS,

MOTOR DRIVERS AND STROBES APPLICATION.

KTC3544T

EPITAXIAL PLANAR NPN TRANSISTOR

E

FEATURES

Adoption of MBIT Processes.

Large Current Capacitance.

Low Collector-to-Emitter Saturation Voltage.

A

F

G

K

B

DIM

A

B

2

3

C

D

MILLIMETERS

_

2.9 + 0.2

1.6+0.2/-0.1

_

0.70 + 0.05

_

0.4 + 0.1

2.8+0.2/-0.3

_

1.9 + 0.2

0.95

_

0.16 + 0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

D

Ultrasmall Package facilitates miniaturization in end products.

High Allowable Power Dissipation.

Complementary to KTA1544T.

C

L

G

High Speed Switching.

1

E

F

G

H

I

J

K

L

J

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

DC

Pulse

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

*

T

j

T

stg

0.8

RATING

30

6

2

4

400

0.9

150

-55

)

150

UNIT

V

A

mA

W

1. EMITTER

2. BASE

3. COLLECTOR

Marking

Lot No.

Type Name

* Package mounted on a ceramic board (600

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

Transition Frequency

Collector Output Capacitance

Turn-On Time

Swiitching

Time

SYMBOL

I

CBO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

ob

t

on

INPUT

TEST CONDITION

V

CB

=20V, I

E

=0

V

EB

=3V, I

C

=0

I

C

=10 A, I

E

=0

I

C

=1mA, I

B

=0

I

E

=10 A, I

C

=0

I

C

=1.5A, I

B

=75mA

I

C

=1.5A, I

B

=75mA

V

CE

=2V, I

C

=100mA

V

CE

=10V, I

C

=50mA

V

CB

=10V, f=1MHz

PW=20µs

DC

<

1%

=

I

B1

I

B2

R

B

50Ω

V

R

100µF

470µF

V

CC

=12V

24Ω

MIN.

-

30

6

-

200

-

OUTPUT

Storage Time

t

stg

Fall Time

t

f

V

BE

=-5V

20I

B1

=-20I

B2

=I

C

=500mA

2001. 11. 7

Revision No : 0

I

J

MAXIMUM RATING (Ta=25

)

H

TSM

HN

TYP.

-

180

0.85

-

150

19

60

MAX.

0.1

-

400

1.2

560

-

MHz

pF

UNIT

A

V

mV

V

-

500

-

nS

-

25

-

1/3

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