SEMICONDUCTOR
TECHNICAL DATA
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
KTC3552T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
Adoption of FBET, MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
A
F
G
K
B
DIM
A
B
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
D
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTA1552T.
C
L
G
High-Speed Switching.
1
E
F
G
H
I
J
K
L
J
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
T
stg
0.8
RATING
80
80
50
6
3
6
600
0.9
150
-55
)
150
UNIT
V
V
V
A
mA
W
1. EMITTER
2. BASE
3. COLLECTOR
Marking
Lot No.
Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
Swiitching
Time
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
h
FE
f
T
C
ob
t
on
INPUT
TEST CONDITION
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=100 A, V
BE
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
I
C
=1A, I
B
=50mA
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=100mA
V
CE
=2V, I
C
=100mA
V
CE
=10V, I
C
=500mA
V
CB
=10V, f=1MHz
PW=20µs
DC
<
1%
=
I
B1
I
B2
R
B
50Ω
V
R
100µF
470µF
V
CC
=25V
R
L
OUTPUT
MIN.
-
-
80
80
50
6
-
-
-
200
-
-
-
Storage Time
t
stg
Fall Time
t
f
V
BE
=-5V
10I
B1
=-10I
B2
=I
C
=1A
2001. 6. 28
Revision No : 0
I
J
MAXIMUM RATING (Ta=25
)
H
TSM
HL
TYP.
-
-
-
-
-
-
80
140
0.88
-
380
13
35
MAX.
0.1
0.1
-
-
-
-
120
210
1.2
560
-
-
-
MHz
pF
UNIT
A
A
V
V
V
V
mV
mV
V
-
300
-
nS
-
22
-
1/3
KTC3552T
I
C
- V
CE
5.0
COLLECTOR CURRENT I
C
(A)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.4
0.8
1.2
I
B
=0mA
100mA
h
FE
- I
C
80mA
1K
DC CURRENT GAIN h
FE
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
60mA
40mA
20mA
10mA
5.0mA
100
50
30
V
CE
=2V
1.6
2.0
10
0.01
0.03
0.1
0.3
1
3
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
1K
500
300
I
C
/I
B
=20
V
CE(sat)
- I
C
1K
500
300
I
C
/I
B
=50
100
50
30
5 C
a=7
T
5 C
a=2
T
=
Ta
-25
C
100
50
30
C
C
75
25
Ta=
a=-
T
C
25
Ta=
10
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
V
BE(sat)
- I
C
1K
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(mV)
500
300
COLLECTOR CURRENT I
C
(A)
I
C
/I
B
=50
I
C
- V
BE
3.2
2.8
2.4
2.0
Ta=25
C
Ta=-25
C
Ta=75
C
V
CE
=2V
100
50
30
Ta=-25 C
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
Ta=25 C
Ta=75 C
10
0.01
0.03
0.1
0.3
1
3
0.8
1.0
1.2
COLLECTOR CURRENT I
C
(A)
BASE-EMITTER VOLTAGE V
BE
(V)
2001. 6. 28
Revision No : 0
2/3
KTC3552T
f
T
- I
C
COLLECTOR OUTPUT CAPACITANCE
C
ob
(pF)
TRANSITION FREQUENCY f
T
(MHz)
1K
500
300
V
CE
=10V
C
ob
- V
CB
100
50
30
100
50
30
10
5
3
f=1MHz
10
0.01
1
0.1
0.3 0.5
1
3
5
10
30 50
COLLECTOR-BASE VOLTAGE V
CB
(V)
0.03
0.1
0.3
1
3
COLLECTOR CURRENT I
C
(A)
SAFE OPERATING AREA
10
COLLECTOR CURRENT I
C
(A)
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
COLLECTOR POWER DISSIPATION
P
C
(W)
I
C
MAX.(PULSED)
Pc - Ta
1.0
0.8
0.6
0.4
0.2
0
MOUNTED ON A
CERAMIC BOARD
(600mm
2
0.8mm)
1m
10
I
C
MAX
(CONTIN-
UOUS)
DC
OP
S*
S
0
µ
*
50
0
µ
10
ER
A
S*
0m
S*
10
mS
*
TI
ON
* SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
(600mm
2
0.8mm)
0
20
40
60
80
100
120
140
160
0.3
1
3
10
30
100
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2001. 6. 28
Revision No : 0
3/3
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