KSC1507
KSC1507
Color TV Chroma Output
• High Collector-Emitter Voltage : V
CEO
=300V
• Current Gain Bandwidth Product : f
T
=40MHz (Min.)
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
300
300
7
0.2
15
150
- 55 ~ 150
Units
V
V
V
mA
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= - 10µA, I
C
= 0
V
CB
= 200V, I
E
= 0
V
CE
= 10V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 30V, I
C
= 10mA
V
CB
= 50V, I
E
= 0,
f = 1MHz
40
80
4
40
Min.
300
300
7
100
240
2.0
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
KSC1507
Typical Characteristics
20
18
1000
I
B
= 140
µ
A
V
CE
= 10V
I
C
[mA], COLLECTOR CURRENT
16
14
12
10
8
6
4
2
0
0
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
h
FE
, DC CURRENT GAIN
I
B
= 120
µ
A
100
10
20
40
60
80
100
120
140
160
180
200
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
I
C
= 10 I
B
I
E
=0
f=1MHz
10
1
V
BE
(sat)
V
CE
(sat)
0.1
C
ob
[pF], CAPACITANCE
1
100
1000
1
0.01
1
10
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
20
P
C
[W], POWER DISSIPATION
15
10
5
0
0
25
50
o
75
100
125
150
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
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2
C™
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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