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MMBTA92-G

Description
General Purpose Transistor
CategoryDiscrete semiconductor    The transistor   
File Size157KB,5 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric View All

MMBTA92-G Overview

General Purpose Transistor

MMBTA92-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
General Purpose Transistor
MMBTA92-G
(PNP)
RoHS Device
Features
-High voltage transistor.
SOT-23
0.119(3.00)
0.110(2.80)
3
0.056(1.40)
0.047(1.20)
Diagram:
Collector
3
1
0.079(2.00)
0.071(1.80)
2
0.006(0.15)
0.003(0.08)
1
Base
0.041(1.05)
0.035(0.90)
0.100(2.550)
0.089(2.250)
2
Emitter
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector current-pulsed
Collector power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
RΘJA
T
J
T
STG
Value
-300
-300
-5
-200
-500
300
410
150
-55 to +150
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
(Ta=25°C, unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Conditions
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-10V, I
C
=-1mA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Min
-300
-300
-5
Max
Unit
V
V
V
-0.25
-0.1
60
100
60
-0.2
-0.9
50
200
μA
μA
DC current gain
V
CE
=-10V,
IC
=-10mA
V
CE
=-10V, I
C
=-30mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
I
C
=-20mA, I
B
=-2mA
I
C
=-20mA, I
B
=-2mA
V
CE
=-20V, I
C
=-10mA
f=30MHz
V
V
MHz
REV: A
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR39
Page 1
Comchip Technology CO., LTD.
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