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SM6T100AHE35B

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size131KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SM6T100AHE35B Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SM6T Series
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AA (SMBJ)
PRIMARY CHARACTERISTICS
V
WM
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.80 V to 188 V
6.8 V to 220 V
6.8 V to 220 V
600 W
5.0 W
100 A
150 °C
Uni-directional, bi-directional
DO-214AA (SMBJ)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM6T12CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
A
= 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
, T
STG
VALUE
600
See next table
5.0
100
- 65 to + 150
UNIT
W
A
W
A
°C
Revision: 13-Dec-13
Document Number: 88385
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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