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BZW06-31RL

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size172KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BZW06-31RL Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15

BZW06-31RL Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeDO-15
package instructionO-PALF-W2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Factory Lead Time11 weeks
Other featuresUL RECOGNIZED
Minimum breakdown voltage34.2 V
Shell connectionISOLATED
Maximum clamping voltage64.3 V
ConfigurationSINGLE
Minimum diode capacitance950 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage31 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
®
BZW06-5V8/376
BZW06-5V8B/376B
TRANSIL
TM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 600 W (10/1000µs)
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
PP
P
I
FSM
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s a 5mm
from case.
Tj initial = Tamb
T
amb
= 75°C
tp = 10ms
Tj initial = T
amb
Value
600
1.7
100
Unit
W
W
A
°C
°C
°C
DO-15
T
stg
T
j
T
L
- 65 to + 175
175
230
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit.
L
lead
= 10 mm
Parameter
Value
60
100
Unit
°C/W
°C/W
February 2003 - Ed : 3A
1/6

BZW06-31RL Related Products

BZW06-31RL BZW06-5V8B376B BZW06-5V8376
Description 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Minimum breakdown voltage 34.2 V 34.2 V 34.2 V
Shell connection ISOLATED ISOLATED ISOLATED
Diode component materials SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Number of components 1 1 1
Number of terminals 2 2 2
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Processing package description - PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Lead-free - Yes Yes
EU RoHS regulations - Yes Yes
state - ACTIVE ACTIVE
packaging shape - ROUND ROUND
Package Size - LONG FORM LONG FORM
terminal coating - MATTE TIN MATTE TIN
Packaging Materials - PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship - AVALANCHE AVALANCHE
structure - SINGLE SINGLE
Maximum power consumption limit - 1.7 W 1.7 W
Maximum non-repetitive peak speed power - 600 W 600 W
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