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BZG05C82-TR

Description
Zener Diode, 82V V(Z), 6.1%, 1.25W,
CategoryDiscrete semiconductor    diode   
File Size48KB,4 Pages
ManufacturerTelefunken Semiconductor GmbH & Co Kg
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BZG05C82-TR Overview

Zener Diode, 82V V(Z), 6.1%, 1.25W,

BZG05C82-TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid103012699
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance200 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation1.25 W
Nominal reference voltage82 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance6.1%
Working test current2.7 mA
BZG05C...
Vishay Telefunken
Silicon Z–Diodes
Features
D
D
D
D
D
Glass passivated junction
High reliability
Voltage range 3.3V to 100V
Fits onto 5 mm SMD footpads
Wave and reflow solderable
15 811
Applications
Voltage stabilization
Order Instruction
Type
BZG05C3V3
Ordering Code
BZG05C3V3–TR
BZG05C3V3–TR3
Remarks
Tape and Reel (1.500 pcs)
Tape and Reel (6.000 pcs)
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Non repetitive peak
surge power dissipation
Junction temperature
Storage temperature range
Test Conditions
R
thJA
<30K/W, T
amb
=60
°
C
R
thJA
<100K/W, T
amb
=25
°
C
t
p
=100
m
s sq.pulse,
T
j
=25
°
C prior to surge
Type
Symbol
P
V
P
V
P
ZSM
T
j
T
stg
Value
3
1.25
60
150
–65...+150
Unit
W
W
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction lead
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1a
mounted on epoxy–glass hard tissue, Fig. 1b
mounted on Al–oxid–ceramic (Al
2
O
3
), Fig. 1b
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
30
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.2A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
Document Number 85595
Rev. 7, 09-Mar-01
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