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PSMN027-100BS

Description
N-channel 100V 26.8 m standard level MOSFET in D2PAK
File Size212KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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PSMN027-100BS Overview

N-channel 100V 26.8 m standard level MOSFET in D2PAK

D2
PA
K
PSMN027-100BS
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.
Rev. 2 — 1 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
see
Figure 12
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; I
D
= 30 A; V
DS
= 50 V;
see
Figure 14;
see
Figure 15
-
-
-
9
30
-
-
-
59
nC
nC
mJ
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
-55
-
-
Typ
-
-
-
-
-
21
Max
100
37
103
175
48
26.8
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
Avalanche ruggedness
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 37 A;
V
sup
100 V; unclamped; R
GS
= 50
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