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ZMS2800

Description
1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size35KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZMS2800 Overview

1 A, SILICON, SIGNAL DIODE

SOD323 SCHOTTKY BARRIER DIODES
ISSUE 1 – NOVEMBER 1998
7
FEATURES
* Miniature Surface Mount Packages
* Low turn-on voltage
* Pico second switching speed
* High breakdown voltage
APPLICATIONS
* Mixers
* Detectors
* Switching
PARTMARK
ZMS2800 - BA
ZMS2811 - BC
ZMS5800 - BB
ZMS2800
ZMS2811
ZMS5800
C
A
SOD323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Forward Current (1µs pulse)
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
SYMBOL
I
F
P
tot
T
j
:T
stg
VALUE
1
250
-55 to +150
UNIT
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
TYPE
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
ZMS2800
ZMS2811
ZMS5800
ZMS2800
ZMS2811
ZMS5800
ZMS2800
ZMS2811
ZMS5800
ZMS2800
ZMS2811
ZMS5800
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E
ZC5800E
V
BR
70
15
50
200
100
200
410
410
410
15
20
15
1.2
1.0
2.0
1.2
2.0
100
100
100
V
V
V
nA
nA
nA
mV
mV
mV
mA
mA
mA
pF
pF
pF
ps
ps
ps
I
R
=10µA
V
R
=50V
V
R
=10V
V
R
=35V
Reverse Leakage
Current
I
R
Forward Voltage
V
F
I
F
=1mA
Forward Current
I
F
V
F
=1V
Capacitance
C
T
V
R
=0 V, f=1MHz
Effective Minority
Lifetime (1)
τ
f= 54 MHz
I
pk
= 20mA

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