Not Recommended for New Design
Please Use ZUMT491
SOT323 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS
ZUMT807-25 -
ZUMT807-40 -
T8
T24
ZUMT807-25
ZUMT807-40
COMPLEMENTARY TYPES
ZUMT807-25 -
ZUMT807-40 -
ZUMT817-25
ZUMT817-40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
I
BM
P
tot
T
j
:T
stg
VALUE
-50
-45
-5
-1
-500
-100
-200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
-25
-40
Transition
Frequency
Collector-base
Capacitance
f
T
C
obo
SYMBOL
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
100
40
160
250
100
8.0
MIN. TYP. MAX. UNIT CONDITIONS.
-700
-1.2
600
400
600
mV
V
MHz
pF
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
-10
-0.1
-5
A
A
A
V
CB
=-20V, I
E
=0
V
CB
=-20V, I
E
=0, T
amb
=150°C
V
EB
=-5V, I
C
=0
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-10mA, V
CE
=-5V
f=35MHz
I
E
=I
e
=0, V
CB
=-10V
f=1MHz
2%
京公网安备 11010802033920号
EEWORLD
